酒井滋樹

サカイシゲキ | Sakai Shigeki

研究分野 (1件)：その他

競争的資金等の研究課題 (2件)：

論文 (175件)：

Mitsue Takahashi, Shigeki Sakai. Area-Scalable 109-Cycle-High-Endurance FeFET of Strontium Bismuth Tantalate Using a Dummy-Gate Process. Nanomaterials. 2021. 11. 1. 101-101
Masataka Harada, Mitsue Takahashi, Shigeki Sakai, Takashi Morie. A time-domain analog weighted-sum calculation circuit using ferroelectric-gate field-effect transistors for artificial intelligence processors. JAPANESE JOURNAL OF APPLIED PHYSICS. 2020. 59. 4
Shigeki Sakai, Mitsue Takahashi. Novel Application of FeFETs to NAND Flash Memory Circuits. FERROELECTRIC-GATE FIELD EFFECT TRANSISTOR MEMORIES: DEVICE PHYSICS AND APPLICATIONS, 2ND EDITION. 2020. 131. 319-341
Mitsue Takahashi, Shigeki Sakai. Development of High-Endurance and Long-Retention FeFETs of Pt/Ca(y)Sr1-yBi(2)Ta(2)O(9)/(HfO2)(x)(Al2O3)(1-x)/Si Gate Stacks. FERROELECTRIC-GATE FIELD EFFECT TRANSISTOR MEMORIES: DEVICE PHYSICS AND APPLICATIONS, 2ND EDITION. 2020. 131. 23-60
Wei Zhang, Mitsue Takahashi, Shigeki Sakai. Investigation of Ferroelectric Grain Sizes and Orientations in Pt/CaxSr1-xBi2Ta2O9/Hf-Al-O/Si High Performance Ferroelectric-Gate Field-Effect-Transistors. MATERIALS. 2019. 12. 3

MISC (113件)：

特許 (50件)：

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酒井 滋樹