木本恒暢

キモトツネノブ | Kimoto Tsunenobu

所属機関・部署：
職名：教授

研究分野 (2件)：電子デバイス、電子機器 , 電気電子材料工学

研究キーワード (3件)：半導体デバイス , 半導体材料 , Semiconductor Material

競争的資金等の研究課題 (39件)：

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論文 (629件)：

Shota Kozakai, Haruki Fujii, Mitsuaki Kaneko, Tsunenobu Kimoto. Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC. Journal of Applied Physics. 2024. 136. 9
Shion Toshimitsu, Keita Tachiki, Mitsuaki Kaneko, Tsunenobu Kimoto. Demonstration of SiC n-channel MOSFETs fabricated on a high-purity semi-insulating substrate and investigation of the short-channel effects. Japanese Journal of Applied Physics. 2024. 63. 9. 090905-090905
Ryoya Ishikawa, Mitsuaki Kaneko, Tsunenobu Kimoto. Estimation of Electron Drift Mobility along the <i>c</i>-Axis in 4H-SiC by Using Vertical Schottky Barrier Diodes. Solid State Phenomena. 2024. 360. 205-210
Koji Ito, Hajime Tanaka, Masahiro Horita, Jun Suda, Tsunenobu Kimoto. Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO₂ interfaces with gate oxides annealed in NO or POCl₃. Applied Physics Express. 2024. 17. 8. 081003-081003
Kyota Mikami, Mitsuaki Kaneko, Tsunenobu Kimoto. High-Mobility 4H-SiC p-Channel MOSFETs on Nonpolar Faces. IEEE Electron Device Letters. 2024. 45. 7. 1113-1116

MISC (160件)：

T. Kimoto, H. Niwa, T. Okuda, E. Saito, Y. Zhao, S. Asada, J. Suda. Carrier lifetime and breakdown phenomena in SiC power device material. Journal of Physics D: Applied Physics. 2018. 51. 36
Yusuke Nishi, Hiroki Sasakura, Tsunenobu Kimoto. Appearance of quantum point contact in Pt/NiO/Pt resistive switching cells. JOURNAL OF MATERIALS RESEARCH. 2017. 32. 14. 2631-2637
木本恒暢, 丹羽弘樹, 須田淳. 高耐圧SiCパワーデバイス実現に資する衝突イオン化係数の精密評価. 応用物理. 2017. 86. 5. 392-396
Tanaka H, Suda J, Kimoto T. Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2017. 2017-September. 277-280
Tanaka H, Suda J, Kimoto T. Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation. Journal of Physics: Conference Series. 2017. 864. 1

書籍 (16件)：

講演・口頭発表等 (228件)：

Progress and Future Challenges of SiC Power MOSFETs
(5th IEEE Electron Devices Technology and Manufacturing Conference 2021 2021)
WISE Program: Innovation of Advanced Photonic and Electronic Devices
(International Workshop on Education and Research for Future Electronics 2021)
Lateral spreads of Al and P atoms implanted into a high-purity semi-insulating SiC substrate
(2020 International Conference on Solid State Devices and Materials 2020)
High electron mobility along the c-axis in 4H-SiC
(2020 International Conference on Solid State Devices and Materials 2020)
Accurate Determination of Barrier Heights in Heavily-Doped SiC Schottky Barrier Diodes Fabricated with Various Metals
(2020 International Conference on Solid State Devices and Materials 2020)

Works (6件)：

学歴 (4件)：

学位 (1件)：

経歴 (4件)：

受賞 (23件)：

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所属学会 (7件)：

ワイドギャップ半導体学会 , Materials Research Society , IEEE , 電気学会 , 電子情報通信学会 , 日本結晶成長学会 , 応用物理学会

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木本 恒暢