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カネコミツアキ | Mitsuaki Kaneko

所属機関・部署：
職名：助教
ホームページURL (1件)： http://semicon.kuee.kyoto-u.ac.jp/

研究分野 (1件)：電気電子材料工学

研究キーワード (4件)：炭化ケイ素 , 結晶成長 , 電子デバイス , ワイドギャップ半導体

競争的資金等の研究課題 (5件)：

論文 (48件)：

T. Kimoto, M. Kaneko, K. Tachiki, K. Ito, K. Mikami, H. Fujii, A. Inoue, N. Maeda. An Overview of SiC High-Voltage Power Devices and High-Temperature ICs. 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). 2024. 88-94
Shota Kozakai, Haruki Fujii, Mitsuaki Kaneko, Tsunenobu Kimoto. Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC. Journal of Applied Physics. 2024. 136. 9. 095702-095702
Shion Toshimitsu, Keita Tachiki, Mitsuaki Kaneko, Tsunenobu Kimoto. Demonstration of SiC n-channel MOSFETs fabricated on a high-purity semi-insulating substrate and investigation of the short-channel effects. Japanese Journal of Applied Physics. 2024. 63. 9. 090905-090905
Ryoya Ishikawa, Mitsuaki Kaneko, Tsunenobu Kimoto. Estimation of Electron Drift Mobility along the <i>c</i>-Axis in 4H-SiC by Using Vertical Schottky Barrier Diodes. Solid State Phenomena. 2024. 360. 205-210
Kyota Mikami, Mitsuaki Kaneko, Tsunenobu Kimoto. High-Mobility 4H-SiC p-Channel MOSFETs on Nonpolar Faces. IEEE Electron Device Letters. 2024. 45. 7. 1113-1116

MISC (4件)：

特許 (4件)：

講演・口頭発表等 (37件)：

SiC High-Voltage Power Devices and High-Temperature Ics
(2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium 2024)
Tunneling Phenomena and Ohmic Contact Formation at Non-Alloyed Metal/Heavily-Doped SiC Interfaces
(Pacific Rim Meeting of Electrochemical and Solid State Science 2024 2024)
Impacts of Anisotropic Material Properties on Performance of SiC Power Devices
(Pacific Rim Meeting of Electrochemical and Solid State Science 2024 2024)
Doping-dependent fixed charges in SiC MOSFETs
(21st International Conference on Silicon Carbide and Related Materials (ICSCRM2024) 2024)
Mobility enhancement in SiC n- and p-channel MOSFETs
(21st International Conference on Silicon Carbide and Related Materials (ICSCRM2024) 2024)

学歴 (2件)：

学位 (1件)：

経歴 (5件)：

委員歴 (5件)：

受賞 (9件)：

2024/10 - ICSCRM2024 program comittee The John Palmour Best Student Paper Award Doping-dependent fixed charges in SiC MOSFETs
2023/10 - IEEE EDS Kansai Chapter The 23rd IEEE EDS Kansai Chapter of the Year Award SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K,” IEEE Electron Device Lett., 43, 997 (2022)
2023/09 - ICSCRM2023 program comittee The John Palmour Best Student Paper Award Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC
2023/06 - 安藤研究所第36回安藤博記念学術奨励賞炭化ケイ素を用いた低消費電力厳環境動作ICの研究
2020/04 - 公益財団法人船井情報科学振興財団(FFIT) 船井研究奨励賞界面不整転位導入による歪み制御窒化アルミニウム結晶の成長と物性解明

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