研究者

J-GLOBAL ID：200901003638445120 更新日: 2020年05月21日

城川潤二郎

キカワジュンジロウ | Kikawa Jyunjiro

所属機関・部署：
職名：教授
ホームページURL (1件)： http://www.ritsumei.ac.jp/se/re/nanishilab/Nanishi-Lab.html
競争的資金等の研究課題 (2件)：

-
-

MISC (4件)：

Junjiroh Kikawa, Masamitsu Kaneko, Hirotaka Otake, Tatsuya Fujishima, Kentaro Chikamatsu, Atsushi Yamaguchi, Yasushi Nanishi. Study of the flat band voltage shift of metal/insulator/n-GaN capacitors by annealing. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. 2010. 247. 7. 1649-1652
Junjiroh Kikawa, Masamitsu Kaneko, Hirotaka Otake, Tatsuya Fujishima, Kentaro Chikamatsu, Atsushi Yamaguchi, Yasushi Nanishi. Study of the flat band voltage shift of metal/insulator/n-GaN capacitors by annealing. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. 2010. 247. 7. 1649-1652
Junjiroh Kikawa, Tomoyuki Yamada, Tadayoshi Tsuchiya, Shinichi Kamiya, Kenichi Kosaka, Akihiro Hinoki, Tsutomu Araki, Akira Suzuki, Yasushi Nanishi. An analysis of the increase in sheet resistance with the lapse of time of Al0.3Ga0.7N/GaN HEMT structure wafers. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007. 2007. 4. 7. 2678-+
Junjiroh Kikawa, Tomoyuki Yamada, Tadayoshi Tsuchiya, Shinichi Kamiya, Kenichi Kosaka, Akihiro Hinoki, Tsutomu Araki, Akira Suzuki, Yasushi Nanishi. An analysis of the increase in sheet resistance with the lapse of time of Al0.3Ga0.7N/GaN HEMT structure wafers. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007. 2007. 4. 7. 2678-+

講演・口頭発表等 (2件)：

Detailed investigation of GaN metal-insulator-semiconductor structures by capacitance-voltage and deep level transient spectroscopy methods
(Mat.Res.Soc.Symp 2009)
Detailed investigation of GaN metal-insulator-semiconductor structures by capacitance-voltage and deep level transient spectroscopy methods
(Mat.Res.Soc.Symp 2009)

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