1. Surface structure analysis of compound semiconductors 2. Crystal Growth mechanism of compound semiconductor thin films
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論文 (113件):
Xu Yang, Shisheng Li, Naoki Ikeda, Akihiro Ohtake, Yoshiki Sakuma. Scalable growth of atomically thin MoS2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source. Applied Surface Science. 2023. 636. 157756-157756
Akihiro Ohtake, Takayuki Suga, Shunji Goto, Daisuke Nakagawa, Jun Nakamura. Atomic structure of the Se-passivated GaAs(001) surface revisited. Scientific Reports. 2023. 13. 1
Takaaki Mano, Akihiro Ohtake, Takuya Kawazu, Hideki T. Miyazaki, Yoshiki Sakuma. Low Dark Current Operation in InAs/GaAs(111)A Infrared Photodetectors: Role of Misfit Dislocations at the Interface. ACS Applied Materials & Interfaces. 2023. 15. 24. 29636-29642
Akihiro Ohtake, Xu Yang. Fabrication of Lattice-Mismatched MoTe<sub>2</sub>/MoSe<sub>2</sub> Heterostructures using Molecular-Beam Epitaxy. Crystal Growth & Design. 2023. 23. 7. 5001-5007
Akihiro Ohtake, Xu Yang, Jun Nara. Structure and morphology of 2H-MoTe2 monolayer on GaAs(111)B grown by molecular-beam epitaxy. npj 2D Materials and Applications. 2022. 6. 1