Study on new ferroelectric materials for non-volatile memory applications
Neuro-devices using ferroelectric thin films as gate inslators
Reconfigurable logic circuits using ferroelectric materials
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論文 (63件)：
Mohit, Takaaki Miyasako, Eisuke Tokumitsu. Indium oxide and indium-tin-oxide channel ferroelectric gate thin film transistors with yttrium doped hafnium-zirconium dioxide gate insulator prepared by chemical solution process. Japanese Journal of Applied Physics. 2021. 60
Panagiotis Dimitrakis, Yoshihisa Fujisaki, Guohan Hu, Eisuke Tokumitsu. Preface. Materials Research Society Symposium Proceedings. 2015. 1729
Eisuke Tokumitsu, Tatsuya Shimoda. Oxide-channel ferroelectric-gate thin film transistors prepared by solution process. Proceedings of the International Display Workshops. 2015. 1. 71-74
Oxide-Channel Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Function
“Ferroelectric-Gate Field Effect Transistor Memories”,Springer, 2016. 2016
Applications of Oxide Channel Ferroelectric-Gate Thin Film Transistors
“Ferroelectric-Gate Field Effect Transistor Memories”, Springer, 2016. 2016
Materials and physics for nonvolatile memories II : spring 2010, April 5-9, San Francisco, California, U.S.A.
Materials Research Society 2010 ISBN:9781605112275
電子物性・材料の事典
朝倉書店 2006
講演・口頭発表等 (210件)：
Coating properties of chemical solution processed MoS2 thin films on various oxides
(2017 European Materials Research Society (E-MRS) Spring Meeting, Strasbourg, France, May 22-26, 2017. paper Q.PM.4 2017)
Chemical Solution Process of In-Based Oxides and MoS2 for Thin Film Transistors
(The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017), June 18-321, 2017, Fukui, paper PA2-1-1 2017)
Direct Imprinting of Oxide Precursor Gel for New Fabrication Process of Thin Film Transistors
(The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017), June 18-321, 2017, Fukui, paper PO3-47 2017)
Investigation of Nb-Zr-O thin film using sol-gel coating
(82016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016), paper B3-3(oral) July 4 - 6, 2016Hakodate Kokusai Hotel, Hakodate, Japan 2017)
Fabrication of MoS2 thin films on oxide-dielectric-covered substrates
(Compound Semiconductor Week, June 26-30, 2016 Toyama International Conference Center, Toyama paper MoP-ISCS-121 2017)
