澤木 宣彦

• 化合物半導体の光電物性と光デバイス
• GaN微細構造の作製と評価
• 量子井戸,量子細線における電子散乱と伝導現象
• Electro-optical properties of compound semiconductors and photonic devices
• Crystal growth and characterization of GaN microstructures
Electron scattering and transport properties of quantum wells and quantum wires

• Eunhee Kim, Toshiki Hikosaka, Yoshio Honda, Masahito Yamaguchi, Nobiuhiko Sawaki. Time-resolved spectroscopy in an undoped GaN (1-101). PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 1. 2008. 5. 1. 367-369
• T. Hikosaka, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki. Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates. Physica Status Solidi (C) Current Topics in Solid State Physics. 2008. 5. 6. 2234-2237
• J. Saida, E. H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki. Energy relaxation processes of photo-generated carriers in Mg doped (0001)GaN and (1-101)GaN. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6. 2008. 5. 6. 1746-1749
• T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki. Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9. 2008. 5. 9. 2966-+
• J. H. Paek, T. Nishiwaki, M. Yamaguchi, N. Sawaki. MBE-VLS growth of GaAs nanowires on (111)Si substrate. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9. 2008. 5. 9. 2740-2742

もっと見る

• 半導体発光素子およびその製造方法
• 半導体発光素子の製造方法
• 窒化物半導体の製造方法
• 半導体素子

• The negative magneto-resistance in an Si atomic layer doped GaAs
  Institute of Physics Conference Series 1999
• Selective area growth and epitaxial lateral overgrowth of wurtzite GaN on (111) Si substrate by metalorganic vapor phase epitaxy
  Institute of Physics Conference Series 1999
• The negative magneto-resistance in an Si atomic layer doped GaAs
  Institute of Physics Conference Series 1999
• Selective area growth and epitaxial lateral overgrowth of wurtzite GaN on (111) Si substrate by metalorganic vapor phase epitaxy
  Institute of Physics Conference Series 1999
• Hot Electrons in Semiconductors (共著)
  Oxford University Press 1998

もっと見る

• 半導体素子(特許第1765021号)(1993年6月)
  1989 -
• Semiconductor Device
  1989 -
• (Negative resistance semiconductor device) United States Patent No 4,816,878 (Mar. 28.1989)
  1986 -
• (Negative resistance semiconductor device) United States Patent No 4,816,878 (Mar. 28.1989)
  1986 -

• 工学博士 (名古屋大学)
• 工学修士

• 2004 - 2007 工学研究科長・工学部長
• 2004 - 2007 Dean/School of Engineering
• 2002 - 2004 名古屋大学評議員
• 2002 - 2004 Senator/Nagoya University
• 2000 - 2002 名古屋大学ベンチャー・ビジネス・ラボラトリー長
2000 - 2002 Director/Nagoya University Venture Business Laboratory
2001 - - 赤崎記念研究センター長
2001 - - Director/Akasaki Research Center
1988 - 1989 インスブルック大学客員教授
1988 - 1989 Visiting Professor/Innsbruck University
1982 - 1989 名古屋大学助教授(工学部)
1982 - 1989 Associate Professor/Nagoya University
1989 - - 名古屋大学教授(工学部・工学研究科)
1989 - - Professor/Nagoya Univesity
1977 - 1982 名古屋大学講師(工学部)
1977 - 1982 Assistant Professor/Nagoya University
1973 - 1977 名古屋大学助手(工学部)
1973 - 1977 Research Associate/Nagoya University

• 2007 - 応用物理学会フェロー
• 2007 - JSAP Fellow
• 2004 - IEEEフェロー
• 2004 - IEEE Fellow
• 1999 - IOP フェロー
1999 - IOP Fellow

米国物理学会APS(American Physical Society) ,  米国電気電子学会(IEEE) ,  日本物理学会 ,  電気学会 ,  応用物理学会 ,  英国物理学会IOP(Institute of Physics) ,  American Physical Society ,  Institute of Electrical and Electronics Engineers ,  Physical Soceity of Japan ,  The Japan Soceity of Applied Physics ,  Institute of Physics