田島道夫

タジマミチオ | Tajima Michio

所属機関・部署：
職名：特任教授
論文 (28件)：

Michio Tajima, Yoichiro Ishikawa, Hirotatsu Kiuchi, Atsushi Ogura. Origin of room-temperature photoluminescence around C-line in electron-irradiated Si and its applicability for quantification of carbon. Appl. Phys. Express. 2018. 11. 041301-1-041301-5
H. Kiuchi, M. Tajima, F. Higuchi, A. Ogura, N. Iida, S. Tachibana, I. Masada and E. Nishijima. Jpn. J. Appl. Phys. 2017. 56. 7. 070305-1-070305-3
Fumito Higuchi, Michio Tajima, Atsushi Ogura. Photoluminescence Due to Early Stage of Oxygen Precipitates in Multicrystalline Si for Solar CellsFumito Higuchi, Michio Tajima and Atsushi Ogura. Jpn. J. Appl. Phys. 2017. 56. 6. 070308-1-070308-3
Michio Tajima, Hirotatsu Kiuchi, Fumito Higuchi, Atsushi Ogura. Quantification of C in Si by photoluminescence at liquid N temperature after electron irradiation. Appl. Phys. Express. 2017. 4. 4. 046602-1-046602-3
Michio Tajima, Kei Nakagawa, Hirotastu Kiuchi, Fumito Higuchi, Atsushi Ogura. Recent Advances in Quantitative Impurity Analysis by Photoluminescence Technique: High Concentration of Dopant Impurities and Low Concentration of Carbon. Proc. 7th Int. Symp. Advanced Science and Technology of Silicon Materials (JSPS Si Symposium). 2016. 185-189

書籍 (5件)：

講演・口頭発表等 (20件)：

Quantification of low-level carbon in Si by photoluminescence at liquid nitrogen temperature and higher after electron irradiation
(10th International Workshop on Crystalline Silicon for Solar Cells (CSSC-10) 2018)
電子線照射Si結晶の室温フォトルミネッセンスで観測されるC-line近傍発光の起源
(第65回応用物理学会春季学術講演会 2018)
電子線照射Si結晶の室温フォトルミネッセンスで観測されるC-line近傍発光を利用した炭素評価
(第65回応用物理学会春季学術講演会 2018)
Determination of carbon concentration in phosphorus-doped n-type Czochralski-grown Si crystals by liquid-nitrogen-temperature photoluminescence after electron irradiation
(27th International Photovoltaic Science and Engineering Conference (PVSEC-27) 2017)
Systematic Variation of Photoluminescence with Dopant Impurities in Highly Doped and Highly Compensated Si
(17th Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVII) 2017)

委員歴 (7件)：

全件表示

受賞 (6件)：

2012/11 - 第12回山﨑貞一賞(計測評価部門)
2009/09 - 応用物理学会論文賞「JJAP論文賞」
2007/08 - 応用物理学会フェロー
1994/12 - Best Poster Award in IEEE First World Conference on Photovoltaic Energy Conversion
1992/08 - 応用物理学会固体素子材料コンファレンス賞(SSDM Award)

全件表示

※　J-GLOBALの研究者情報は、researchmapの登録情報に基づき表示しています。登録・更新については、こちらをご覧ください。

田島 道夫