Crystal Growth of Semiconductor SiC and Material Characterization
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論文 (636件):
Masahiro Hara, Hajime Tanaka, Mitsuaki Kaneko, Tsunenobu Kimoto. Analysis of trap-assisted tunneling current at non-alloyed contacts formed on heavily ion-implanted n-type SiC. Journal of Applied Physics. 2025. 137. 13
Koji Ito, Hajime Tanaka, Masahiro Horita, Jun Suda, Tsunenobu Kimoto. Free electron mobility limited by fixed charges and trapped electrons in 4H-SiC(11 2 ̄ 0) and (1 1 ̄ 00) MOSFETs annealed in NO. Japanese Journal of Applied Physics. 2025. 64. 1. 010902-010902
Xilun Chi, Koji Ito, Takeru Suto, Akio Shima, Mitsuaki Kaneko, Tsunenobu Kimoto. Unique Electron Trapping and its Impacts on Electron Mobility in SiC n-Channel MOSFETs. 2024 IEEE International Electron Devices Meeting (IEDM). 2024. 1-4
Haruki Fujii, Mitsuaki Kaneko, Tsunenobu Kimoto. Depth profiles of hole traps in the tail region of Al ion implantation into p-type 4H-SiC. Japanese Journal of Applied Physics. 2024. 63. 11. 118002-118002
T. Kimoto, H. Niwa, T. Okuda, E. Saito, Y. Zhao, S. Asada, J. Suda. Carrier lifetime and breakdown phenomena in SiC power device material. Journal of Physics D: Applied Physics. 2018. 51. 36
Tanaka H, Suda J, Kimoto T. Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation. Journal of Physics: Conference Series. 2017. 864. 1
Progress and Future Challenges of SiC Power MOSFETs
(5th IEEE Electron Devices Technology and Manufacturing Conference 2021 2021)
WISE Program: Innovation of Advanced Photonic and Electronic Devices
(International Workshop on Education and Research for Future Electronics 2021)
Lateral spreads of Al and P atoms implanted into a high-purity semi-insulating SiC substrate
(2020 International Conference on Solid State Devices and Materials 2020)
High electron mobility along the c-axis in 4H-SiC
(2020 International Conference on Solid State Devices and Materials 2020)
Accurate Determination of Barrier Heights in Heavily-Doped SiC Schottky Barrier Diodes Fabricated with Various Metals
(2020 International Conference on Solid State Devices and Materials 2020)