金子光顕, 木本恒暢. 高温環境での動作を可能にするSiC JFETを用いた相補型論理回路の研究. 電子情報通信学会誌 C. 2024. J107-C. 145-153
Ryoya Ishikawa, Hajime Tanaka, Mitsuaki Kaneko, Tsunenobu Kimoto. Origin of hole mobility anisotropy in 4H-SiC. Journal of Applied Physics. 2024. 135. 7. 075704-075704
Kyota Mikami, Keita Tachiki, Mitsuaki Kaneko, Tsunenobu Kimoto. Insight Into Mobility Improvement by the Oxidation-Minimizing Process in SiC MOSFETs. IEEE Transactions on Electron Devices. 2024. 71. 1. 931-934
Xilun Chi, Keita Tachiki, Kyota Mikami, Mitsuaki Kaneko, Tsunenobu Kimoto. Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs. Japanese Journal of Applied Physics. 2023. 62. 11. 110906-110906
Mitsuaki Kaneko, Masashi Nakajima, Qimin Jin, Noriyuki Maeda, Tsunenobu Kimoto. 350°C Operation of SiC Complementary JFET Logic Gates. 2023 IEEE CPMT Symposium Japan (ICSJ). 2023
SiC JFETを用いた厳環境動作相補型論理回路
(半導体エレクトロニクス部門委員会第2回研究会 ナノ材料部門委員会第3回研究会 2023)
350 ̊C operation of SiC complementary JFET logic gates
(12th IEEE CPMT Symposium Japan (ICSJ2023) 2023)
Physics and Performance Improvement of SiC MOSFETs
(2023 Int. Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology 2023)
SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K [IEEE EDL]
(The 23rd Kansai Colloquium Electron Devices Workshop 2023)
Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC
(20th International Conference on Silicon Carbide and Related Materials (ICSCRM2023) 2023)
2023/10 - IEEE EDS Kansai Chapter The 23rd IEEE EDS Kansai Chapter of the Year Award SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K,” IEEE Electron Device Lett., 43, 997 (2022)
2023/09 - ICSCRM2023 program comittee The John Palmour Best Student Paper Award Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC