石崎 達也. Quantification of Tenseness for Tense and Lax Vowels in English and Japanese: Indicator θ1 and Force of Tenseness Ftense(t). シティライフ学研究(宇都宮共和大学). 2025. 26
石崎 達也. 日英語の母音の緊張性に関する数理モデルの構築 ー緊張性 θ1 と緊張力 Ftense(t) の導入による発音手法の検討 ー / Mathematical Models of Tenseness for Tense and Lax Vowels in English and Japanese: Indicator θ1 and Force of Tenseness Ftense(t). 2025
The technology that enables continuous write and read operations to the same address with a single command. A semiconductor storage device, in which successive reading and successive writing of data having a predetermined length from and to a memory cell specified by a certain address are performed. Semiconductor storage device and its control method.
半导体存储器件及其控制方法
The technology that enables random access to DRAM in specific memory regions. Semiconductor memory device and data storage method including address conversion circuit to convert coordinate information of data into one-dimensional information to amplifier. (A memory device that stores multi-dimensional coordinate data such as three-dimensional (3D image) data "continuously on one word line in burst mode" based on the coordinate information of the data.
英語母音の緊張性の定量化 ー緊張性 θ1 と緊張力 Ftense(t) に基づく発音手法の物理学的な考察ー / Quantification of Tenseness in English Tense and Lax Vowels: Indicator θ1 and Force of Tenseness Ftense(t)
(日本実践英語音声学会(PEPSJ) 第6回研究大会 ゲスト講演 2024)
