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J-GLOBAL ID：202202261095734856   整理番号：22A0958363

触媒金属粒子による六方晶窒化ホウ素上の高アスペクト比ナノトレンチのための指向性エッチング【JST・京大機械翻訳】

Directional etching for high aspect ratio nano-trenches on hexagonal boron nitride by catalytic metal particles

著者 (27件)： Chen Chen (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, People’s Republic of China) ,  Chen Chen (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, People’s Republic of China) ,  Chen Chen (CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, People’s Republic of China) ,  He Li (School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, People’s Republic of China) ,  Jiang Chengxin (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, People’s Republic of China) ,  Jiang Chengxin (School of Physical Science and Technology, ShanghaiTech University, Shanghai, People’s Republic of China) ,  Chen Lingxiu (School of Materials Science and Physics, China University of Mining and Technology, Xuzhou, People’s Republic of China) ,  Wang Hui Shan (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, People’s Republic of China) ,  Wang Hui Shan (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, People’s Republic of China) ,  Wang Hui Shan (CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, People’s Republic of China) ,  Wang Xiujun (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, People’s Republic of China) ,  Wang Xiujun (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, People’s Republic of China) ,  Wang Xiujun (CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, People’s Republic of China) ,  Kong Ziqiang (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, People’s Republic of China) ,  Kong Ziqiang (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, People’s Republic of China) ,  Kong Ziqiang (CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, People’s Republic of China) ,  Mu Xiaojing (Key Laboratory of Optoelectronic Technology and Systems Ministry of Education International R & D Center of Micro-Nano Systems and New Materials Technology, Chongqing University, Chongqing, People’s Republic of China) ,  Wei Zhipeng (State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, People’s Republic of China) ,  Watanabe Kenji (National Institute for Materials Science, 1-1 Namiki, Tsukuba, Japan) ,  Taniguchi Takashi (National Institute for Materials Science, 1-1 Namiki, Tsukuba, Japan) ,  Wu Tianru (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, People’s Republic of China) ,  Wu Tianru (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, People’s Republic of China) ,  Wu Tianru (CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, People’s Republic of China) ,  Zhang Daoli (School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, People’s Republic of China) ,  Wang Haomin (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, People’s Republic of China) ,  Wang Haomin (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, People’s Republic of China) ,  Wang Haomin (CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, People’s Republic of China)
資料名： 2D Materials  (2D Materials)
巻： 9  号： 2  ページ： 025015 (6pp)  発行年： 2022年 
JST資料番号： W5550A  ISSN： 2053-1583  資料種別： 逐次刊行物 (A)
記事区分： 原著論文  発行国： イギリス (GBR)  言語： 英語 (EN)

抄録/ポイント： 六方晶窒化ホウ素(hBN)を含む多次元ヘテロ構造の魅力的な性能によって刺激され,hBNナノ構造を付加的に魅力的な物理特性をもたらすことができる鋭い境界/界面の生成に,強い注意が払われてきた。しかし,制御可能な合成の欠如は,hBNナノ構造に関するさらなる実験的調査を制限する。ここでは,鋭いエッジを有するナノトレンチを生成するためのhBNの表面上の遷移金属ナノ粒子(NP)の方向性エッチングを系統的に研究した。PtとIr NPのみが低H_2分圧でアームチェア配向ナノトレンチを生成できるが,他の遷移金属はジグザグ配向ナノトレンチに導くことが分かった。ナノトレンチの密度と幅は常にエッチング温度と前処理溶液濃度と共に増加し,一方トレンチ配向はH_2分圧とエッチング温度の両方に依存した。ナノトレンチのアスペクト比は最適化条件下で数千に達する。本法は,2D結晶のエッジ選択的パターニングに光を照らす。Please refer to the publisher for the copyright holders. Translated from English into Japanese by JST.【JST・京大機械翻訳】

シソーラス用語： *エッチング ,  界面 ,  最適化 ,  遷移金属 ,  白金 ,  分圧 ,  二次元 ,  *窒化ホウ素 ,  高次元 ,  *金属触媒 ,  パターン形成 ,  ナノ構造 ,  ナノ粒子
準シソーラス用語： ヘテロ構造 ,  金属ナノ粒子 ,  *六方晶窒化ホウ素 ,  トレンチ , 【Automatic Indexing@JST】

分類 (1件)： 固体デバイス製造技術一般  (NC03030V)

タイトルに関連する用語 (7件)： 触媒 ,  金属粒子 ,  六方晶窒化ホウ素 ,  高アスペクト比 ,  トレンチ ,  指向性 ,  エッチング