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J-GLOBAL ID：200901030964938274   Update date: Nov. 13, 2024

Nakatsuka Osamu

ナカツカ オサム | Nakatsuka Osamu
Affiliation and department：
Nagoya University Graduate School of Engineering Materials Physics 1

About Nagoya University Graduate School of Engineering Materials Physics 1


Job title： Professor
Homepage URL  (2)： http://alice.xtal.nagoya-u.ac.jp/nanoeledev/ ,  http://alice.xtal.nagoya-u.ac.jp/nanoeledev/e_index.html
Research field  (1)： Thin-film surfaces and interfaces
Research keywords  (6)： crystalline growth ,  thin film ,  surface structure ,  crystalline structure ,  electrical property:electron conduction ,  solid state devices
Research theme for competitive and other funds  (17)：
  • 2021 - 2024 Energy band design based on controlling ordered/disordered structure of non-thermal equilibrium group-IV alloy thin films
  • 2021 - 2023 Creation of exotic low-dimensional material originated from phyllosilicate and control of its electronic property
  • 2019 - 2022 Development of calculation technique for defect control in semiconductors for power device application
  • 2016 - 2019 Development of calculation method for physical properties based on the possible atomic configurations and its application to the IV group semiconductor materials
  • 2014 - 2019 Establishment of Fundamental Engineering of Sn-related Group-IV Semiconductor Materials for Multi-Functional and Low-Power Electronics
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Papers (381)：
  • Shigehisa Shibayama, Kaito Shibata, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka. Epitaxial growth of Ge1-x Sn x thin film with Sn composition of 50% and possibility of Ge-Sn ordered bonding structure formation. Applied Physics Express. 2024
  • Shigehisa Shibayama, Shunsuke Mori, Yoshiki Kato, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka. Comprehensive study on epitaxial growth of GeSn(111) layers with high Sn content on Si(111) featuring Ge buffer layer. ECS Transactions. 2024
  • Tatsuro Maeda, Hiroyuki Ishii, Wen Hsin Chang, Shiyu Zhang, Shigehisa Shibayama, Masashi Kurosawa, Osamu Nakatsuka. Layer transfer of epitaxially grown Ge-lattice-matched Si27.8Ge64.2Sn8 films. Materials Science in Semiconductor Processing. 2024
  • Tatsuma Hiraide, Shigehisa Shibayama, Masashi Kurosawa, Mitsuo Sakashita, Osamu Nakatsuka. Tensile-strained Ge1-x Sn x layers on Si(001) substrate by solid-phase epitaxy featuring seed layer introduction. Japanese Journal of Applied Physics. 2024
  • Masashi Kurosawa, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka. (Invited) Epitaxial Growth Technique for Si1-X Sn x Binary Alloy Thin Films. ECS Meeting Abstracts. 2023
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MISC (107)：
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Patents (15)：
  • 多層膜構造体およびその形成方法
  • p型SiC用電極
  • ジャーマナイド薄膜、ジャーマナイド薄膜の作成方法、ジャーマナイド薄膜を備えたゲルマニウム構造体
  • 伸張歪ゲルマニウム薄膜の作製方法、伸張歪ゲルマニウム薄膜、及び多層膜構造体
  • METHOD FOR FABRICATING A SILICIDE FILM, MULTILAYERED INTERMEDIATE STRUCTURE AND MULTILAYERED STURUCTURE
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Books (4)：
  • 第3章,第3節,Geエピタキシャル成長と薄膜構造制御
    株式会社エヌ・ティー・エス 2013
  • Chapter 1.4: Heterostructure Interfaces and Strain
    CRC Press 2013
  • Chapter 17: Slicide and germanide technology for interconnections in ultra-large-scale integrated (ULSI) applications
    Woodhead Publishing 2011
  • Chapter 8, Silicide in "Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications"
    Springer 2009
Lectures and oral presentations  (408)：
  • Heterostructure design favorable for n+-Ge1-xSnx pseudo-direct transition layer for optoelectronic application
    (13th International Symposium on Advanced Plasma Scienceand its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science, (ISPlasma2021/IC-PLANTS2021))
  • Epitaxial growth of strain-relaxed and high-Sn-content n-Ge1-xSnx on Si(111) substrate with Ge buffer layer
    (The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT))
  • コンタクト抵抗率低減のための金属/IV族半導体界面制御技術
    (第84回半導体・集積回路技術シンポジウム 2020)
  • Crystal Growth of Epitaxial 3C-SiC Thin Film on Si Substrate By Chemical Vapor Deposition using Single Precursor of Vinylsilane
    (Pacificrim Meeting on Electrochemical and Solid-State Science (PRiME2020))
  • Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design
    (Pacificrim Meeting on Electrochemical and Solid-State Science (PRiME2020))
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Education (2)：
  • - 2000 Nagoya University Graduate School, Division of Engineering Department of Crystalline Materials Science
  • - 1997 Nagoya University Graduate School, Division of Engineering Department of Crystalline Materials Science
Professional career (1)：
  • 工学(博士) (名古屋大学)
Work history (15)：
  • 2017/04/01 - 現在 Nagoya University Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section
  • 2017/04/01 - 現在 Nagoya University Graduate School of Engineering Materials Physics 1 Professor
  • 2016/07/01 - 現在 Graduate School of Engineering, Nagoya University Professor
  • 2016/07/01 - 2017/03/31 Nagoya University Graduate School of Engineering Department of Crystalline Materials Science Nano-Structured Device Engineering Professor
  • 2015/04/01 - 2016/09/30 Stanford University Department of Electrical Engineering Visiting Associate Professor
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Awards (5)：
  • 2016/04/06 - Japanese Jouranal Applied Physcis APEX/JJAP Editorial Contribution Award
  • 2015/09/28 - SSDM Organizing Committee SSDM Paper Award 2015 Operations of CMOS Inverter and Ring Oscillator Composed of Ultra-Thin Body Poly-Ge p- and n-MISFETs for Stacked Channel 3D-IC
  • 2015/09/17 - ADMETA Committee ADMETA Technical Achievement Award 2014 Formation of Epitaxial NiGe Layer on Ge(001) Substrate and Influence of Interface Structure on Schottky Barrier Height
  • 2008/05/13 - The fourth International SiGe Technology and Device Meeting ISTDM 2008 Best Poster Award
  • 2006/11/10 - 東京工業大学精密工学研究所 第3回 P&I パテントコンテスト:パテント・オブ・ザ・イヤープロセス・テクノロジー部門
Association Membership(s) (4)：
日本真空協会 ,  日本結晶成長学会 ,  日本表面科学会 ,  The Japan Society of Applied Physics
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