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J-GLOBAL ID：200901030964938274   Update date: Aug. 26, 2024

Nakatsuka Osamu

ナカツカ オサム | Nakatsuka Osamu
Affiliation and department：
Nagoya University Graduate School of Engineering Materials Physics 1

About Nagoya University Graduate School of Engineering Materials Physics 1


Job title： Professor
Homepage URL  (2)： http://alice.xtal.nagoya-u.ac.jp/nanoeledev/ ,  http://alice.xtal.nagoya-u.ac.jp/nanoeledev/e_index.html
Research field  (1)： Thin-film surfaces and interfaces
Research keywords  (6)： crystalline growth ,  thin film ,  surface structure ,  crystalline structure ,  electrical property:electron conduction ,  solid state devices
Research theme for competitive and other funds  (17)：
  • 2021 - 2024 Energy band design based on controlling ordered/disordered structure of non-thermal equilibrium group-IV alloy thin films
  • 2021 - 2023 Creation of exotic low-dimensional material originated from phyllosilicate and control of its electronic property
  • 2019 - 2022 Development of calculation technique for defect control in semiconductors for power device application
  • 2016 - 2019 Development of calculation method for physical properties based on the possible atomic configurations and its application to the IV group semiconductor materials
  • 2014 - 2019 Establishment of Fundamental Engineering of Sn-related Group-IV Semiconductor Materials for Multi-Functional and Low-Power Electronics
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Papers (379)：
  • Tatsuro Maeda, Hiroyuki Ishii, Wen Hsin Chang, Shiyu Zhang, Shigehisa Shibayama, Masashi Kurosawa, Osamu Nakatsuka. Layer transfer of epitaxially grown Ge-lattice-matched Si27.8Ge64.2Sn8 films. Materials Science in Semiconductor Processing. 2024
  • Tatsuma Hiraide, Shigehisa Shibayama, Masashi Kurosawa, Mitsuo Sakashita, Osamu Nakatsuka. Tensile-strained Ge1-x Sn x layers on Si(001) substrate by solid-phase epitaxy featuring seed layer introduction. Japanese Journal of Applied Physics. 2024
  • Masashi Kurosawa, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka. (Invited) Epitaxial Growth Technique for Si1-X Sn x Binary Alloy Thin Films. ECS Meeting Abstracts. 2023
  • Jotaro Nagano, Shota Ikeguchi, Takuma Doi, Mitsuo Sakashita, Osamu Nakatsuka, Shigehisa Shibayama. Emergence of ferroelectricity in ZrO2 thin films on TiN/Si featuring high temperature sputtering method. Materials Science in Semiconductor Processing. 2023
  • Kaoru Hashimoto, Shigehisa Shibayama, Koji Asaka, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka. Self-organized Ge1-x Sn x quantum dots formed on insulators and their room temperature photoluminescence. Japanese Journal of Applied Physics. 2023
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MISC (107)：
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Patents (15)：
  • 多層膜構造体およびその形成方法
  • p型SiC用電極
  • ジャーマナイド薄膜、ジャーマナイド薄膜の作成方法、ジャーマナイド薄膜を備えたゲルマニウム構造体
  • 伸張歪ゲルマニウム薄膜の作製方法、伸張歪ゲルマニウム薄膜、及び多層膜構造体
  • METHOD FOR FABRICATING A SILICIDE FILM, MULTILAYERED INTERMEDIATE STRUCTURE AND MULTILAYERED STURUCTURE
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Books (4)：
  • 第3章,第3節,Geエピタキシャル成長と薄膜構造制御
    株式会社エヌ・ティー・エス 2013
  • Chapter 1.4: Heterostructure Interfaces and Strain
    CRC Press 2013
  • Chapter 17: Slicide and germanide technology for interconnections in ultra-large-scale integrated (ULSI) applications
    Woodhead Publishing 2011
  • Chapter 8, Silicide in "Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications"
    Springer 2009
Lectures and oral presentations  (408)：
  • Heterostructure design favorable for n+-Ge1-xSnx pseudo-direct transition layer for optoelectronic application
    (13th International Symposium on Advanced Plasma Scienceand its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science, (ISPlasma2021/IC-PLANTS2021))
  • Epitaxial growth of strain-relaxed and high-Sn-content n-Ge1-xSnx on Si(111) substrate with Ge buffer layer
    (The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT))
  • コンタクト抵抗率低減のための金属/IV族半導体界面制御技術
    (第84回半導体・集積回路技術シンポジウム 2020)
  • Crystal Growth of Epitaxial 3C-SiC Thin Film on Si Substrate By Chemical Vapor Deposition using Single Precursor of Vinylsilane
    (Pacificrim Meeting on Electrochemical and Solid-State Science (PRiME2020))
  • Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design
    (Pacificrim Meeting on Electrochemical and Solid-State Science (PRiME2020))
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Education (2)：
  • - 2000 Nagoya University Graduate School, Division of Engineering Department of Crystalline Materials Science
  • - 1997 Nagoya University Graduate School, Division of Engineering Department of Crystalline Materials Science
Professional career (1)：
  • 工学(博士) (名古屋大学)
Work history (15)：
  • 2017/04/01 - 現在 Nagoya University Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section
  • 2017/04/01 - 現在 Nagoya University Graduate School of Engineering Materials Physics 1 Professor
  • 2016/07/01 - 現在 Graduate School of Engineering, Nagoya University Professor
  • 2016/07/01 - 2017/03/31 Nagoya University Graduate School of Engineering Department of Crystalline Materials Science Nano-Structured Device Engineering Professor
  • 2015/04/01 - 2016/09/30 Stanford University Department of Electrical Engineering Visiting Associate Professor
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Awards (5)：
  • 2016/04/06 - Japanese Jouranal Applied Physcis APEX/JJAP Editorial Contribution Award
  • 2015/09/28 - SSDM Organizing Committee SSDM Paper Award 2015 Operations of CMOS Inverter and Ring Oscillator Composed of Ultra-Thin Body Poly-Ge p- and n-MISFETs for Stacked Channel 3D-IC
  • 2015/09/17 - ADMETA Committee ADMETA Technical Achievement Award 2014 Formation of Epitaxial NiGe Layer on Ge(001) Substrate and Influence of Interface Structure on Schottky Barrier Height
  • 2008/05/13 - The fourth International SiGe Technology and Device Meeting ISTDM 2008 Best Poster Award
  • 2006/11/10 - 東京工業大学精密工学研究所 第3回 P&I パテントコンテスト:パテント・オブ・ザ・イヤープロセス・テクノロジー部門
Association Membership(s) (4)：
日本真空協会 ,  日本結晶成長学会 ,  日本表面科学会 ,  The Japan Society of Applied Physics
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