Ogawa Matsuto

オガワマツト | Ogawa Matsuto

Affiliation and department：
Job title： Director
Homepage URL (2)： http://www2.kobe-u.ac.jp/~lerl2/j_research.html , http://www2.kobe-u.ac.jp/~lerl2/en_research.html

Research field (1)： Electronic devices and equipment

Research keywords (3)： computational nano-electronics , nano-device design , semiconductor nano-electronics

Research theme for competitive and other funds (3)：

Papers (101)：

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MISC (39)：

SOUMA SATOFUMI, 田中未来, 市原圭祐, 迫田翔太郎, SASAOKA KENJI, OGAWA MATSUTO. 歪みグラフェンを用いたディラック電子エンジニアリング素子のシミュレーション. 信学技報 IEICE Technical Report. 2015. SMD2015-89. 29-34
Sasaoka Kenji, Kato Kazuma, Souma Satofumi, Ogawa Matsuto. 28pPSA-72 Transient response simulations of scattering states under time-dependent gate voltage. Meeting abstracts of the Physical Society of Japan. 2014. 69. 1. 895-895
Ohmori Masaki, Koba Shunsuke, Maegawa Yosuke, Tsuchiya Hideaki, Kamakura Yoshinari, Mori Nobuya, Ogawa Matsuto. Quantum transport simulation of ultrasmall III-V MOSFETs using Wigner Monte Carlo approach. Technical report of IEICE. SDM. 2013. 113. 296. 65-70
Furubayashi Y., Ogawa M., Souma S. 28pPSA-5 Numerical analysis of current noise caused by potential fluctuation in semiconductor nanowires II. Meeting abstracts of the Physical Society of Japan. 2013. 68. 1. 777-777
Kobayashi Y., Ogawa M., Souma S. 20pPSA-7 Numerical analysis of current noise caused by potential fluctuation in semiconductor nanowires. Meeting abstracts of the Physical Society of Japan. 2012. 67. 2. 644-644

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Patents (1)：

Books (3)：

Lectures and oral presentations (207)：

二次元原子膜h-BCNにおける原子配置が光誘起電流に及ぼす影響と受光感度評価
(第79回応用物理学会秋季学術講演会 2018)
グラフェン状物質h-BCNをチャネルとしたFETにおける電気伝導特性ばらつきの統計的解析
(第79回応用物理学会秋季学術講演会 2018)
グラフェン/h-BCN超格子構造をチャネルに用いたFETの量子閉じ込めによる特性変化
(第79回応用物理学会秋季学術講演会 2018)
グラフェン/h-BCN超格子構造の超格子ポテンシャルを用いた量子閉じ込めが光誘起電流に及ぼす影響
(第79回応用物理学会秋季学術講演会 2018)
ナノスケールデバイスシミュレーションのための非平衡グリーン関数法と障壁高さモデルの比較検討
(第66回応用物理学会春季学術講演会 2018)

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Education (1)：

Professional career (1)：

Committee career (5)：

Awards (7)：

2016/12 - Institution of Electronics, Information and Communication of Engineers Senior Member of Institution of Electronics, Information and Communication of Engineers Pioneering Research on Quantum Mechanical Electronic and Phonotic Device Simulation
2011/09 - Japan Society of Applied Physics Fellow Award of Japan Society of Applied Physics Pioneering Research on Atomistic Nano-scaled Device Simulation
2009/05 - IEEE Electron Devices Society The 2009 International Meeting for Future of Electron Devices Best Paper Award "Influence of Edge Roughness on the Performance of Graphene Nano-Ribbon Devices"
2009/03 - IEEE Electron Devices Society IEEE Senior member Outstanding contribution to quantum simulation of nano-scaled devices
2008/07 - 半導体理工学研究センター(STARC) The 6th Project Research Award, Semiconductor Technology Academic Research Center 原子レベルの材料特性を考慮した 3次元量子輸送デバイスシミュレータの開発」の成果

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Association Membership(s) (3)：

応用物理学会 , 電子情報通信学会 , IEEE

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