KAZUHITO FURUYA

フルヤカズヒト | KAZUHITO FURUYA

Research theme for competitive and other funds (2)：

MISC (466)：

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Books (2)：

Lectures and oral presentations (104)：

InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric
(IEICE Technical Report, Electron Devices 2010)
Al2O3ゲート絶縁膜を用いたInP/InGaAsコンポジットチャネルMOSFET
(電子情報通信学会電子デバイス研究会 2010)
Reduction of the Base Transit Time in Ultra-thin Graded-Base InP/GaInAs Heterojunction Bipolar Transistor
(Technical Report of IEICE, Electron Devices 2009)
Fabrication of vertical InGaAs-MOSFET with heterostructure launcher and intrinsic channel
(Technical Meeting on Electron Devices, IEE Jpn. 2009)
Vertical InGaAs-MOSFET with heterostructure launcher and intrinsic channel
(The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies 2009)

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Education (3)：

- 1975 Tokyo Institute of Technology Graduate School, Division of Science and Engineering
- 1975 Tokyo Institute of Technology Science of Engineering
- 1970 Tokyo Institute of Technology

Professional career (2)：

Work history (1)：

Committee career (1)：

1994 - 1994 電子情報通信学会電子デバイス研究専門委員会委員長、エレクトロニクスグループ運営委副委員長、ハンドブック幹事会(第5次から継続中) 幹事長

Awards (4)：

Association Membership(s) (4)：

IEEE , IEEE , 応用物理学会 , 電子情報通信学会

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