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J-GLOBAL ID：200901089736935774   Update date: Dec. 04, 2024

Kimoto Tsunenobu

キモト ツネノブ | Kimoto Tsunenobu
Affiliation and department：
Kyoto University Graduate School of Engineering, Department of Electronic Science and Engineering

About Kyoto University Graduate School of Engineering, Department of Electronic Science and Engineering


Job title： Professor
Research field  (2)： Electronic devices and equipment ,  Electric/electronic material engineering
Research keywords  (3)： Semiconductor Devices ,  半導体材料 ,  Semiconductor Material
Research theme for competitive and other funds  (39)：
  • 2024 - 2028 Unlocking the Future Potential of Silicon Carbide in Power Electronics
  • 2021 - 2026 Materials Science and Device Physics in SiC toward Robust Electronics
  • 2021 - 2022 学理に基づく高品質SiC/酸化膜界面の形成とロバストデバイスへの展開
  • 2018 - 2021 Clarification of physical properties in semi-insulating SiC wafers and fabrication of complimentary junction field-effect transistors
  • 2009 - 2014 Defect Engineering in SiC and Application to Robust Devices with Ultrahigh Blocking Voltage
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Papers (631)：
  • Haruki Fujii, Mitsuaki Kaneko, Tsunenobu Kimoto. Depth profiles of hole traps in the tail region of Al ion implantation into p-type 4H-SiC. Japanese Journal of Applied Physics. 2024. 63. 11. 118002-118002
  • Takeaki Kitawaki, Xilun Chi, Mitsuaki Kaneko, Tsunenobu Kimoto. Impact ionization coefficients along 4H-SiC 〈 11 2 ̄ 0 〉 in a wide temperature range. Japanese Journal of Applied Physics. 2024. 63. 11. 118004-118004
  • Shota Kozakai, Haruki Fujii, Mitsuaki Kaneko, Tsunenobu Kimoto. Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC. Journal of Applied Physics. 2024. 136. 9
  • Shion Toshimitsu, Keita Tachiki, Mitsuaki Kaneko, Tsunenobu Kimoto. Demonstration of SiC n-channel MOSFETs fabricated on a high-purity semi-insulating substrate and investigation of the short-channel effects. Japanese Journal of Applied Physics. 2024. 63. 9. 090905-090905
  • Ryoya Ishikawa, Mitsuaki Kaneko, Tsunenobu Kimoto. Estimation of Electron Drift Mobility along the <i>c</i>-Axis in 4H-SiC by Using Vertical Schottky Barrier Diodes. Solid State Phenomena. 2024. 360. 205-210
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MISC (160)：
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Books (16)：
  • 薄膜作製応用ハンドブック
    NTS 2020
  • Wide Bandgap Semiconductor Power Devices
    2018
  • Handbook of Crystal Growth, Volume 3B: Thin Films and Epitaxy, 2nd edition
    2014
  • Fundamentals of Silicon Carbide Technology
    2014
  • Silicon Carbide and Related Materials 2013
    2014
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Lectures and oral presentations  (228)：
  • Progress and Future Challenges of SiC Power MOSFETs
    (5th IEEE Electron Devices Technology and Manufacturing Conference 2021 2021)
  • WISE Program: Innovation of Advanced Photonic and Electronic Devices
    (International Workshop on Education and Research for Future Electronics 2021)
  • Lateral spreads of Al and P atoms implanted into a high-purity semi-insulating SiC substrate
    (2020 International Conference on Solid State Devices and Materials 2020)
  • High electron mobility along the c-axis in 4H-SiC
    (2020 International Conference on Solid State Devices and Materials 2020)
  • Accurate Determination of Barrier Heights in Heavily-Doped SiC Schottky Barrier Diodes Fabricated with Various Metals
    (2020 International Conference on Solid State Devices and Materials 2020)
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Works (6)：
  • SiC結晶成長とデバイス応用
    2000 - 2004
  • SiC結晶成長技術
    1999 - 2004
  • Crystal Grouth of SiC
    1999 - 2001
  • Crystal Grouth of SiC and Device Applocations
    2001 -
  • ダイヤモンド半導体に関する研究
    1989 -
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Education (4)：
  • - 1988 Kyoto University
  • - 1988 Kyoto University Graduate School, Division of Engineering
  • - 1986 Kyoto University Faculty of Engineering
  • - 1986 Kyoto University Faculty of Engineering
Professional career (1)：
  • Doctor of Engineering (Kyoto University)
Work history (4)：
  • 1988 - 1990 アモルファスSiおよびダイヤモンド半導体の研究
  • 1988 - 1990 Research and Devclopmant of Amophon Si and Semiconducter Diamond
  • 1990 - - SiCの結晶成長とデバイス応用
  • 1990 - - Cuystal Grouth of SiC and Deuice Applocations
Awards (23)：
  • 2020 - 山﨑貞一賞
  • 2020 - IEEE ISPSD 2020 Ohmi Best Paper Award
  • 2020 - 文部科学大臣表彰 科学技術賞(研究部門)
  • 2020 - 岩谷直治記念賞
  • 2017 - 科学研究費助成事業 審査員表彰
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Association Membership(s) (7)：
ワイドギャップ半導体学会 ,  Materials Research Society ,  IEEE ,  電気学会 ,  電子情報通信学会 ,  日本結晶成長学会 ,  応用物理学会
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