Lu Xiangmeng

ロショウモウ | Lu Xiangmeng

Research field (1)： Crystal engineering

Research keywords (5)： GaAs/Ge/GaAs heterostructure , high-index GaAs , Terahertz , molecular beam epitaxy , quantum dots

Research theme for competitive and other funds (6)：

2019 - 2022 Research and development on terahertz-LED using sublattice reversal epitaxy
2016 - 2019 Research and development on terahertz light emitting diodes
2016 - 2019 Application of InAs quantum dots with ultrafast carrier relaxation to terahertz wave detection devices
2015 - 2017 Sublattice reversal epitaxy on high-index substrates for semiconductor coupled multilayer cavity
2014 - 2016 Characterization of in-plane photoconductivity of InAs QDs layers and its application to photoconductive antenna

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Papers (24)：

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MISC (3)：

Invited Talk : Novel Terahertz Light Emitting Devices Based on a Semiconductor Coupled Multilayer Cavity. 2017. 116. 430. 33-36
Tow-Color VCSELs Based on a Coupled Multilayer Cavity for Novel Terahertz Emission Devices. 2016. 116. 52. 67-72
Isu Toshiro, Ota Hiroto, Harayama Chiho, Lu Xiangmeng, Kumagai Naoto, Kitada Takahiro. CI-1-3 Terahertz Light Emitting Device by Coupled Cavity Structure of Semiconductor Multilayers. Proceedings of the Society Conference of IEICE. 2015. 2015. 1. "SS-57"-"SS-58"

Education (3)：

Professional career (2)：

Work history (1)：

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