Research field (1)：
Thin-film surfaces and interfaces
Research theme for competitive and other funds (6)：
2023 - 2026 Gate insulator deposition process for GaN-based MOS devices using mist-CVD technique
2019 - 2022 Surface passivation and insulated gate structures for nitride-based semiconductor devices using mist-CVD method
2019 - 2021 2019年4月
2015 - 2018 Fabrication of low-cost oxide LED without minor metals and toxic elements by atmospheric pressure film formation method
2008 - 2010 Fabrication of injection-type infrared light emitting devices for high-speed integrated circuits and investigation of the light emission mechanism
2005 - 2006 Mask-less lithography by individual control of ultra-violet light emitting diode array
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Papers (17)：
Rui Shan Low, Joel T. Asubar, Ali Baratov, Shunsuke Kamiya, Itsuki Nagase, Shun Urano, Shinsaku Kawabata, Hirokuni Tokuda, Masaaki Kuzuhara, Yusui Nakamura, et al. GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique. Applied Physics Express. 2021. 14. 3. 031004-1-031004-5
Zenji Yatabe, Yusui Nakamura, Joel T. Asubar. Mist chemical vapor deposited-gate insulators for GaN-based MIS devices applications. 2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). 2022. 1-3
S. Urano, R. S. Low, M. Faris, M. Ishiguro, I. Nagase, A. Baratov, J. T. Asubar, T. Motoyama, Y. Nakamura, Z. Yatabe, et al. Electrical properties of GaN-based MISHEMTs with Al2O3 gate insulator deposited by ALD and mist-CVD techniques. 2021 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). 2021. 1-2
M. Ishiguro, S. Urano, R. S. Low, M. Faris, I. Nagase, A. Baratov, J. T. Asubar, T. Motoyama, Y. Nakamura, Z. Yatabe, et al. Recessed gate GaN-based MIS-HEMTs with Al2O3 gate dielectric deposited by mist-CVD method. 2021 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). 2021. 1-2
Tomohiro Motoyama, Zenji Yatabe, Yusui Nakamura, Ali Baratov, Rui Shan Low, Shun Urano, Joel T. Asubar, Masaaki Kuzuhara. Mist chemical vapor deposited-Al2O3/AlGaN interfacial characterization for GaN MIS-HEMTs. 2021 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). 2021. 1-2
