Rchr
J-GLOBAL ID：201701016014142376
Update date: Oct. 24, 2019
Kazunori Ichikawa
イチカワ カズノリ | Kazunori Ichikawa
Affiliation and department：
National Institute of Technology,Matsue College Department of Control Engineering
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Detailed information
Papers (4)：
K. Ichikawa, S. Tateishi, H. Akamatsu. Oxygen concentration dependence of transfer free graphene thin film transistor. The 15th International Thin-Film Transistor Conference (ITC2019). 2019. 100-101
R. Morioka, K. Ichikawa, H. Akamatsu, T. Ohshima. Nickel nitride semiconductor was synthesized by thermal chemical vapor deposition. Proceedings of the 41st International Symposium on Dry Process (DPS2019). 2018. 179-180
Hiroshi Akamatsu, Ko-ya Kuriyama, Shin-ichi Yamamoto, Kazunori Ichikawa. Plasma-assisted formation of oxide thin film at atmospheric pressure and unheated process. 2nd Asia-Pacific Conference on Plasma Physics. 2018. 100-100
K. Kuriyama, H. Akamatsu, S. Yamamoto, K. Ichikawa. Plasma-assisted synthesis of zinc oxide thin film using two different precursor materials. Proceedings of the 41st International Symposium on Dry Process (DPS2019). 2018. 249-250
Lectures and oral presentations (5)：
カキの貝殻の電子デバイスへの応用
(平成30年度電気学会中国支部 第11回高専研究発表会 2019)
プラズマプロセスによる窒化ニッケル薄膜の作製
(第28回日本MRS年次大会 2018)
グラフェン合成における酸素濃度依存性
(第15回薄膜材料デバイス研究会 2018)
Niの熱窒化により作製したNi窒化物半導体の酸素依存性
(第15回薄膜材料デバイス研究会 2018)
次世代パワー半導体を用いたパルス電源用コンデサ充電電源
(電気学会平成30年基礎・材料・共通部門大会 2018)
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