Excitation Intensity Dependence of Photoluminesence on InAs/GaSb Superlattice with Constant Ratio of Layer Thickness. 2020
Temperature Dependence of Mid-infrared Photoluminescence for InAs/GaSb Superlattice with Varying GaSb Layer Thickness. 2020
T. Fujisawa, M. Arai, K. Saitoh. Microscopic gain analysis of modulation-doped GeSn/SiGeSn quantum wells: epitaxial design toward high-temperature lasing. Optics Express. 2019. 27. 3. 2457-2464
Minami Akie, Takeshi Fujisawa, Takanori Sato, Masakazu Arai, Kunimasa Saitoh. GeSn/SiGeSn multiple-quantum-well electroabsorption modulator with taper coupler for mid-infrared Ge-on-Si platform. IEEE Journal of Selected Topics in Quantum Electronics. 2018. 24. 6
2021/04 - 現在 University of Miyazaki Engineering educational research section Department of Engineering Applied Physics and Engineering Program Associate Professor
2015/04/01 - 現在 University of Miyazaki Engineering educational research section Department of Applied Physics and Electronic Engineering Associate Professor
2015/04 - 2021/03 University of Miyazaki Department of Applied Physics and Electronic Engineering Associate Professor