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J-GLOBAL ID：201801014639913804
Update date: Jun. 23, 2023
Ogasahara Yasuhiro
Ogasahara Yasuhiro
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Papers (36)：
Kunihiro Oshima, Michihiro Shintani, Kazunori Kuribara, Yasuhiro Ogasahara, Takashi Sato. Recovery-Aware Bias-Stress Degradation (to be published)Model for Organic Thin-Film Transistors Considering Drain and Gate Bias Voltages. Japanese Journal of Applied Physics (JJAP). 2020. 59. SE
Ogasahara Yasuhiro, Kuribara Kazunori, Shintani Michihiro, Sato Takashi. Feasibility of a low-power, low-voltage complementary organic thin film transistor buskeeper physical unclonable function. JAPANESE JOURNAL OF APPLIED PHYSICS. 2019. 58. SB. SBBG03-SBBG03
A compact model of I-V characteristic degradation for organic thin film transistors. 2019 IEEE 32ND INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS). 2019. 194-199
Michihiro Shintani, Zhaoxing Qin, Kazunori Kuribara, Yasuhiro Ogasahara, Masayuki Hiromoto, Takashi Sato. Mechanically and electrically robust metal-mask design for organic CMOS circuits. Japanese Journal of Applied Physics. 2018. 57. 4
Saito Michiaki, Shintani Michihiro, Kuribara Kazunori, Ogasahara Yasuhiro, Sato Takashi. Measurement and Modeling of Frequency Degradation of an oTFT Ring Oscillator. 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT). 2018. 455-457
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Professional career (1)：
情報科学 (大阪大学)
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