Research field (4)：
Electric/electronic material engineering
, Semiconductors, optical and atomic physics
, Nanostructure physics
, Thin-film surfaces and interfaces
Research theme for competitive and other funds (10)：
2021 - 2025 エピタキシャルグラフェンを用いた高出力テラヘルツLEDの実現
2021 - 2024 Design of 2D heterostructures by crystal growth
2015 - 2019 Induction of magnetic function on two-dimensional metal thin film based on quantum well structure and its application
2014 - 2017 Study on heterogeneous integration of graphene device
2010 - 2012 Controlling of local electro-mechanical properties of few-layer graphen
2010 - 2012 Control of dielectric function by making nano-scale structure of IV-group semiconductor
2009 - 2011 Creation of single-crystal graphene substrate through surface structure control on a wafer scale
2007 - 2009 Investigation of nano-scale conductance properties of few layer graphene films
2007 - 2009 Appearance of ferromagnetism in nanoscaled 4d/5d transition metal induced by electrical, optical and dynamical techniques
2006 - 2008 Control of Silicon Nanostructure Oxidation by Nitrogen Doping
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Papers (235)：
Shengnan Wang, Jack Crowther, Hiroyuki Kageshima, Hiroki Hibino, Yoshitaka Taniyasu. Epitaxial Intercalation Growth of hBN/Graphene Bilayer Heterostructure on Commercial Copper Foil. Chemistry of Materials. 2024. 36. 10. 5142-5148
Ryo Imamura, Hiroyuki Kageshima. First-principles study on shape of intrinsic hBN island nucleated during CVD initial growth on Cu(111). Japanese Journal of Applied Physics. 2024
Hayate Murakami, Fumiya Fukunaga, Motoki Ohi, Kosuke Kubo, Takeru Nakagawa, Hiroyuki Kageshima, Yasuhide Ohno, Masao Nagase. Twist angle dependence of graphene-stacked junction characteristics. Japanese Journal of Applied Physics. 2024
Hiroyuki Kageshima, Toru Akiyama, Kenji Shiraishi. First-principles study on barrier height of silicon emission from interface into oxide during silicon thermal oxidation. Japanese Journal of Applied Physics. 2024. 63. 4. 04SP08-04SP08
Toru Akiyama, Hiroyuki Kageshima, Kenji Shiraishi. Reaction of NO molecule at 4H-SiC/SiO2 interface and its orientation dependence: a first-principles study. Japanese Journal of Applied Physics. 2024. 63. 3. 03SP80-03SP80
影島博之, 秋山亨, 白石賢二. First-principles Study on Silicon Emission from Interface into Oxide during Silicon Thermal Oxidation. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2023. 70th
秋山亨, 清水紀志, 伊藤智徳, 影島博之, 白石賢二. Ab initio study for reaction of nitrogen oxide and NH3 at 4H-SiC/SiO2 interface. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2022. 69th
秋山亨, 清水紀志, 伊藤智徳, 影島博之, 白石賢二. Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO2 interface. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd
