GOTO Ken

ゴトウケン | GOTO Ken

Research field (1)： Optical engineering and photonics

Research keywords (7)： Quantum Structures of Semiconductor , Electrical Properties of Semiconductor , Crystal Growth of Nitride Semiconductor , Crystal Growth of Oxide Semiconductor , Ultra-wide-bandgap semiconductor , Near-IR, Visible light, Deep-UV , Optical properties on Semiconductor

Research theme for competitive and other funds (3)：

2022 - 2025 Growth of low dislocation density indium oxide single crystal layer to elucidate intrinsic electron mobility
2016 - 2021 Bottom up creation of singularities by utilization of equilibrium and non-equilibrium crystal growth from vapor phase
2010 - 2010 新しい半導体ナノ構造であるコアマルチシェルナノワイヤの光物性研究

Papers (61)：

Kazutada Ikenaga, Takahito Okuyama, Haruka Tozato, Taro Nishimura, Shogo Sasaki, Ken Goto, Masato Ishikawa, Yoshihiko Takinami, Hideaki Machida, Yoshinao Kumagai. Mass spectrometric study of β-Ga2O3growth process by metalorganic vapor phase epitaxy. Japanese Journal of Applied Physics. 2023. 62. SF
Tomoka Nishikawa, Ken Goto, Hisashi Murakami, Yoshinao Kumagai, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama. Observation of nanopipes in edge-defined film-fed grown β-Ga2O3 substrate and their effect on homoepitaxial surface hillocks. Japanese Journal of Applied Physics. 2023
Rie Togashi, Ken Goto, Masataka Higashiwaki, Yoshinao Kumagai. Thermodynamic analysis of molecular beam epitaxy of group-III sesquioxides. JAPANESE JOURNAL OF APPLIED PHYSICS. 2023. 62. 5
Toshiyuki Iwamoto, Verdad Canila Agulto, Shuang Liu, Youwei Wang, Valynn Katrine Mag-usara, Takashi Fujii, Ken Goto, Yoshinao Kumagai, Makoto Nakajima. Characterization of electrical properties of β-Ga2O3 epilayer and bulk GaAs using terahertz time-domain ellipsometry. Japanese Journal of Applied Physics. 2023. 62. SF
Yoshinao Kumagai, Ken Goto, Toru Nagashima, Reo Yamamoto, Michał Boćkowski, Junji Kotani. Influence of growth rate on homoepitaxial growth of AlN at 1450 °C by hydride vapor phase epitaxy. Applied Physics Express. 2022. 15. 11. 115501-115501

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MISC (5)：

AGULTO Verdad C., IWAMOTO Toshiyuki, TOYA Kazuhiro, MAG-USARA Valynn Katrine, GOTO Ken, MURAKAMI Hisashi, KUMAGAI Yoshinao, NAKAJIMA Makoto. Nondestructive Characterization of Carrier Density and Mobility in β-Ga₂O₃ Using Terahertz Waves. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd
野村一城, 後藤健, 後藤健, 佐々木公平, 佐々木公平, THIEU Quang Tu, 富樫理恵, 村上尚, 東脇正高, 倉又朗人, et al. Siドープ酸化ガリウム厚膜のHVPEホモエピタキシャル成長. 結晶成長国内会議予稿集(CD-ROM). 2015. 45th. ROMBUNNO.19PB08
倉又朗人, 飯塚和幸, 佐々木公平, 輿公祥, 増井建和, 森島嘉克, 後藤健, 熊谷義直, 村上尚, 纐纈明伯, et al. Optical and Electrical Device Application of Gallium Oxide Single Crystal. 日本結晶成長学会誌(CD-ROM). 2015. 42. 2. 130-140
Kuramata Akito, Koukitu Akinori, Wong Man Hoi, Kamimura Takafumi, Higashiwaki Masataka, Yamakoshi Shigenobu, Iizuka Kazuyuki, Sasaki Kohei, Koshi Kimiaki, Masui Takekazu, et al. Optical and Electrical Device Application of Gallium Oxide Single Crystal(<Special Issue>Recent Advance in Functional Single Crystals). Journal of the Japanese Association for Crystal Growth. 2015. 42. 2. 130-140
Masataka Higashiwaki, Kohei Sasaki, Ken Goto, Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu, et al. Ga2O3 Schottky Barrier Diodes with n(-)-Ga2O3 Drift Layers Grown by HVPE. 2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC). 2015. 2015-August. 29-30

Books (2)：

Gallium Oxide: Crystal Growth, Materials Properties, and Devices
Springer 2020
Ultra-Wide Bandgap Semiconductor Materials
Elsevier 2019

Lectures and oral presentations (180)：

Electrical Properties Of β-Ga2O3 Homoepitaxial Layer Measured By Terahertz Time-Domain Spectroscopy
(45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2020))
水素雰囲気異方性熱エッチング(HEATE)法によるHVPE-In2O3成長層のエッチング特性の熱力学的検討
(第81回応用物理学会秋季学術講演会)
Vertical gallium oxide transistors with a current aperture formed using nitrogen-ion implantation process
(4th IEEE Electron Devices Technology and Manufacturing Conference (EDTM) 2020)
水素雰囲気異方性熱エッチング(HEATE)法によるHVPE-In2O3成長層のエッチング特性評価
(第67回応用物理学会春季学術講演会)
Recent Progress in Gallium Oxide Power Transistor Technologies
(The 3rd Symposium for The Core Research Clusters for Materials Science and Spintronics)

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Education (3)：

2006 - 2009 Graduate School, University of Tsukuba Graduate School of Pure and Applied Sciences Doctoral Programs in Frontier Science
2001 - 2004 Graduate School, University of Tsukuba Graduate School of Pure and Applied Sciences Master's Program in Materials Science
1997 - 2001 University of Tsukuba Third Cluster of Colleges College of Engineering Sciences

Professional career (1)：

Ph.D. in Science (University of Tsukuba)

Work history (4)：

2019/03 - 現在 Tokyo University of Agriculture and Technology Department of Applied Chemistry Assistant Professor
2010/06 - 2019/02 Tamura Corporation Core Technology Division
2009/04 - 2010/05 Graduate School, University of Tsukuba Graduate School of Pure and Applied Sciences Postdoc
2004/04 - 2006/02 Mitsubishi Electric Corporation Energy and Electric Systems

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