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J-GLOBAL ID：201901007914544084   Update date: Oct. 08, 2024

Kyuno Kentaro

Kyuno Kentaro
Research field  (1)： Metallic materials
Research theme for competitive and other funds  (13)：
  • 2022 - 2025 金属触媒を利用した半導体結晶薄膜の低温形成
  • 2015 - 2017 Study on the fluid phases on the surface of eutectic systems at room temperature
  • 2013 - 2017 Low temperature crystallization of Si by metal-induced crystallization method
  • 2012 - 2015 Fabrication and application of self-organized nano structured films by bi-layer agglomeration phenomena
  • 2013 - 2013 Geの低温結晶化技術の確立によるプラスチックフィルム上での高性能TFTの実現
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Papers (93)：
  • Narin Sunthornpan, Kentaro Kyuno. Au-induced crystallization of amorphous Ge thin films: An indication of the existence of a recrystallization process during growth at deep subeutectic temperature. Journal of Alloys and Compounds. 2024. 1007. 176428-176428
  • Shun Aoki, Masaya Shimabukuro, Ryo Kishida, Kentaro Kyuno, Kazuhiko Noda, Taishi Yokoi, Masakazu Kawashita. Electrochemical Deposition of Copper on Bioactive Porous Titanium Dioxide Layer: Antibacterial and Pro-Osteogenic Activities. ACS Applied Bio Materials. 2023. 6. 12. 5759-5767
  • Narin Sunthornpan, Ken Hirose, Kentaro Kyuno. Fabrication of an atomically smooth Ge(111) surface by Au-induced crystallization at 170 °C. Applied Physics Letters. 2023. 122. 17
  • Narin Sunthornpan, Kenjiro Kimura, Kentaro Kyuno. Morphology of Ge thin films crystallized by Au-induced layer exchange at low temperature (220 °C). Journal of Vacuum Science & Technology B. 2022. 40. 3. 030601-030601
  • Narin Sunthornpan, Kenjiro Kimura, Kentaro Kyuno. Crystallization of Ge thin films by Au-induced layer exchange: effect of Au layer thickness on Ge crystal orientation. Japanese Journal of Applied Physics. 2022. 61. SB. SB1029-SB1029
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MISC (18)：
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Lectures and oral presentations  (27)：
  • AgSb合金を用いたMIC法によるn型Ge結晶薄膜の作製と電気特性の膜厚依存性
    (日本金属学会 第172回講演大会 2023)
  • AuGe合金の第一原理電子状態計算
    (日本金属学会 第172回講演大会 2023)
  • AuSb合金を用いたMIC法で作製したGe薄膜の構造と電気特性
    (日本金属学会第172回講演大会 2023)
  • Auで被覆した加熱基板へのスパッタによるGe薄膜の結晶化
    (日本金属学会 第172回講演大会 2023)
  • Realizing an atomically flat surface of Ge (111) thin film at low temperature (220°C) by gold-induced layer exchange
    (The 64th Electronic Materials Conference 2022)
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Education (1)：
  • 1991 - 1993 The University of Tokyo The Graduate School of Engineering
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