Rchr
J-GLOBAL ID：202101007931323820
Update date: Jun. 27, 2024
Hatayama Shogo
ハタヤマ ショウゴ | Hatayama Shogo
Affiliation and department：
Research field (1)：
Inorganic materials
Research keywords (4)：
Amorphous
, Non-volatile memory
, Chalcogenaide
, phase change material
Research theme for competitive and other funds (5)：
- 2022 - 2025 低環境負荷と高耐熱性を兼ね備えたセレクタデバイスの創製
- 2022 - 2024 バンドエンジニアリングによる高機能性結晶酸化物型セレクタ材料の実現
- 2021 - 2023 相変化材料と酸化物の積層MIS接合を用いた大容量・低消費電力不揮発性メモリの実現
- 2022 - 2023 次世代選択素子の実現に向けた遷移金属含有アモルファスカルコゲナイド材料の創製
- 2017 - 2020 Cr-Ge-Te系層状物質の高速相変化機構の解明及び不揮発性メモリへの応用
Papers (44)：
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Yi Shuang, Yuta Saito, Shogo Hatayama, Paul Fons, Ando Daisuke, Yuji Sutou. Amorphous-to-crystalline transition-induced two-step thin film growth of quasi-one-dimensional penta-telluride ZrTe5. Journal of Materials Science and Technology. 2025. 210. 246-253
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Misako Morota, Shogo Hatayama, Yi Shuang, Shunsuke Mori, Yuji Sutou, Paul Fons, Yuta Saito. Interfacial reaction behavior between ferromagnetic CoFeB and the topological insulator Sb2Te3. Surfaces and Interfaces. 2024. 51
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Shogo Hatayama, Kotaro Makino, Yuta Saito. Phase-change behavior of RuSbTe thin film for photonic applications with amplitude-only modulation. Scientific Reports. 2024
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Kentaro Saito, Shogo Hatayama, Yuta Saito. Modified Electronic Structure of Amorphous Mn-Si-Te for Ovonic Threshold Switch Application: Improved Thermal Stability by the Formation of Mn-Te Bonding. physica status solidi (RRL) - Rapid Research Letters. 2024
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Naoya Okada, Wen Hsin Chang, Shogo Hatayama, Yuta Saito, Toshifumi Irisawa. Electrical properties and band alignments of Sb2Te3/Si heterojunctions, low-barrier Sb2Te3/n-Si and high-barrier Sb2Te3/p-Si junctions. Applied Physics Express. 2024
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MISC (23)：
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石原島弘明, 石原島弘明, 馬場将亮, 畑山祥吾, 齊藤雄太, 内田紀行, 武田雅敏. スパッタ法で成膜したVO2薄膜の物性に及ぼすWドープの影響. 日本金属学会講演大会(Web). 2022. 171st
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畑山祥吾, 齊藤雄太, 齊藤雄太, 内田紀行, 内田紀行. Realizing of a selector function in Hf-O-Te amorphous films by composition control. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2022. 69th
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齊藤雄太, 畑山祥吾, 諸田美砂子. Orientation controlled chalcogenide phase-change material thin films. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2022. 69th
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須藤祐司, 畑山祥吾, 森竣祐, YI Shunag. Enhancement of phase-change memory performance: Approach from the development of new phase-change materials. 半導体・集積回路技術シンポジウム(CD-ROM). 2021. 85th
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畑山祥吾, 畑山祥吾, 小林啓介, 小林啓介, 齊藤雄太, FONS Paul, FONS Paul, YI Shuang, 森竣祐, KOLOBOV Alexander V., et al. Understanding the mechanism of lowering resistivity in transition metal included amorphous chalcogenide. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd
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Patents (2)：
Education (1)：
- 2017 - 2020 Tohoku University Graduate School of Engineering
Professional career (1)：
Work history (3)：
- 2023/04 - 現在 National Institute of Advanced Industrial Science and Technology
- 2021/04 - 2023/03 National Institute of Advanced Industrial Science and Technology
- 2020/04 - 2021/03 Tohoku University Graduate School of Engineering
Awards (2)：
- 第49回 応用物理学会講演奨励賞
- 第6回シリコン材料・デバイス研究会 若手優秀発表賞
Association Membership(s) (2)：
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