Rchr
J-GLOBAL ID：200901003576910913
Update date: Sep. 01, 2020
Ogura Mutsuo
オグラ ムツオ | Ogura Mutsuo
Affiliation and department：
National Institute of Advanced Industrial Science and Technology
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Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=M25339838
Research field (1)：
Electronic devices and equipment
Research keywords (1)：
化合物半導体 光電子デバイス フォトトランジスタ 半導体レーザ 量子細線
MISC (63)：
Y. Higuchi, S. Osaki, T. Kitada, S. Shimomura, Y. Takasuka, M. Ogura, S. Hiyamizu. Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (775)B GaAs substrates by molecular beam epitaxy. SOLID-STATE ELECTRONICS. 2006. 50. 6. 1137-1140
XL Wang, M Ogura, T Guillet, Voliotis, V, R Grousson. Strong Fermi-edge singularity in ultra-high-quality AlGaAs/GaAs quantum wires. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES. 2006. 32. 1-2. 329-332
M Ogura, T Sugaya. Highly sensitive InGaAs/InAIAs quantum wire photo-FET. ELECTRONICS LETTERS. 2006. 42. 7. 413-414
A Feltrin, F Michelini, JL Staehli, B Deveaud, Savona, V, J Toquant, XL Wang, M Ogura. Localization-dependent photoluminescence spectrum of biexcitons in semiconductor quantum wires. PHYSICAL REVIEW LETTERS. 2005. 95. 17
SJ Kim, T Itatani, T Sugaya, M Ogura, Y Sugiyama. Characterization of the InGaAs/InAlAs HEMT transit output response by using an electro-optical sampling technique. JOURNAL OF THE KOREAN PHYSICAL SOCIETY. 2005. 47. 3. 520-524
ｍore...
Association Membership(s) (3)：
IEEE
, 電子通信学会
, 応用物理学会
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