Rchr
J-GLOBAL ID:200901003958455477
Update date: May. 10, 2020
Akiyama Masahiro
アキヤマ マサヒロ | Akiyama Masahiro
Contact this researcher
You can send email directly to the researcher.
Research field (1):
Electronic devices and equipment
Research theme for competitive and other funds (4):
高周波デバイス.回路に関する研究
高速・高周波半導体回路に関する研究
Devices and Circuits for High Frequency
Study on High Speed and High frequency semiconductor circuits
MISC (3):
M AKIYAMA, S NISHI, Y KAWAKAMI. HIGH-SPEED GAAS DIGITAL INTEGRATED-CIRCUITS. IEICE TRANSACTIONS ON ELECTRONICS. 1995. E78C. 9. 1165-1170
Growth of GaAs on Si and Its Application to FETs and LEDs (共著. Material Research Society Symposium. 1986. Proc67. 53-64
Growth of Single Domain GaAs Lager on (100)Oriented Si Substrate by MOCVD(共著). Jpn. J. Appl. Physics. 1984. 23. 11. PL843-L845
Works (2):
半導体高周波回路の研究
2001 -
Study of High Frequency semiconductor Circuits
2001 -
Education (2):
- 1970 Kyoto University Faculty of Science
- 1970 Kyoto University Faculty of Science Dep of Astronamy
Professional career (1):
(BLANK) (Kyoto University)
Work history (3):
1971 - 2001 沖電気工業(株)(研究開発部門)
1971 - 2001 Oki Electric Ind. Co. Ltd. (R & D. Division)
Kyoto Institute of Technology Graduate School of Science and Technology
Committee career (2):
2000 - 応用物理学会 評議員
1990 - 1991 電子情報通信学会 エレクトロニクス研究グループ運営委員会会計幹事
Awards (1):
1988 - 科学技術庁長官賞
Association Membership(s) (2):
応用物理学会
, 電子情報通信学会
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in
researchmap
.
For details, see here
.
Return to Previous Page
TOP
BOTTOM