Art

J-GLOBAL ID：200902125916960270   Reference number：95A0887695

Ultra-High-Speed Electron Devices. High Speed GaAs Digital Integrated Circuits.

高速GaAsディジタル集積回路

Author (3)： AKIYAMA M (Oki Electric Co., Ltd., Hachioji-shi, JPN) ,  NISHI S (Oki Electric Co., Ltd., Hachioji-shi, JPN) ,  KAWAKAMI Y (Oki Electric Co., Ltd., Hachioji-shi, JPN)
Material： IEICE Transactions on Electronics (Institute of Electronics, Information and Communication Engineers)  (IEICE Trans Electron (Inst Electron Inf Commun Eng))
Volume： E78-C  Issue： 9  Page： 1165-1170  Publication year： Sep. 1995 
JST Material Number： L1370A  ISSN： 0916-8524  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： digital integrated circuit ,...

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JST classification (1)： Semiconductor integrated circuit  (NC03162T)

Reference (16)：

• MATSUOKA, Y. High-Speed AlGaAs/GaAs HBTs and Their Apllications to 40-Gbit/s-class ICs. GaAs IC Symp. 1994, Tech. Digest. 185
• KURIYAMA, Y. A 40 GHz D-type Flip-flop using AlGaAs/GaAs HBT's. GaAs IC Symp. 1994, Tech. Digest. 189
• TSUNOTANI, M. Advanced self-alignment process Technique with Very Thick Sidewall for High Speed GaAs LSIs. IEDM 1988 Tech. Digest. 700
• JINBO, H. Sub-Half-Micron i-Line Lithography by Use of LMR-UV Resist. Jpn. J. Appl. Phys. 1989, vol.28, 2053
• KIMURA, T. Subhalf-micron Gate GaAs MESFET Process Using Phase-Shifting Mask Technology. GaAs IC Symp. 1991 Tech. Digest. 281

Terms in the title (2)： GaAs ,  ディジタル集積回路