Current status of ferroelectric random-access memory
MRS Bulletin 2004
“Part IV, The FET-type FeRAM”, Ferroelectric Random Access Memories - Fundamentals and Applications, eds. by H.Ishiwara, M.Okuyama, and Y.Arimoto
Springer-Verlag 2004
“Part I, Novel Si-substituted ferroelectric films”, Ferroelectric Random Access Memories - Fundamentals and Applications, eds. by H.Ishiwara, M.Okuyama, and Y.Arimoto
Springer-Verlag 2004
Ferroelectric Random Access Memories - Fundamentals and Applications
Springer-Verlag 2004
Ferroelectric and Electrical Properties of BaZrO_3_ Doped Sr_0.8_Bi_2.2_Ta_2_O_9_ Thin Films
(MRS Spring Meeting 2008)
Effect of Ba and Zr Doping in Sr_0.8_Bi_2.2_Ta_2_O_9_ Thin Films
(The 2nd International Conference on Science and Technology for Advanced Ceramics (STAC2) 2008)