J-GLOBAL ID:200901024469862040   Update date: Mar. 23, 2019

YAMAMOTO Shuu'ichirou

ヤマモト シユウイチロウ | YAMAMOTO Shuu'ichirou
Affiliation and department:
Job title: Specially Appointed Associate Professor (Lecturer)
Research theme for competitive and other funds  (1):
  • research and development of next generation ferro-electric memory
MISC (37):
  • Shuu'ichirou Yamamoto and Satoshi Sugahara. Nonvolatile SRAM and flip-flop architectures using magnetic tunnel junctions with current-induced magnetization switching technology. Jpn. J. Appl. Phys. 2009. 48. 4. 043001-1-7
  • S. Yamamoto, and S. Sugahara. Nonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture. Jpn. J. Appl. Phys. 2009. 48. 4. 043001/1-7
  • Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara. Nonvolatile SRAM architecture using MOSFET-based spin-transistors. J. Appl. Phys. 2009. 105. 07C933/1-3
  • Hyun-Soo Kim Shuu'ichirou Yamamoto Toru Ishikawa Takaaki Fuchikami Hiroshi Ohki Hiroshi Ishiwara. Fabrication and Characterization of 1k-bit 1T2C-Type Ferroelectric Memory Cell Array. Japanese Journal of Applied Physics. 2005. 44. 4B. 2715-2721
  • HYUN-SOO KIM SHUU'ICHIROU YAMAMOTO HIROSHI ISHIWARA. Improvement of Data Readout Disturbance Effect in 1T2C-Type Ferroelectric Memory Array. Integrated Ferroelectrics. 2004. 67. 271-280
Books (2):
  • Critical Current Density of YBCO Ultra Thin Films Prepared by Atomic Layer MOCVD
    Advances in Superconductivity VII (eds. by K.Ysmafuji and T.Morishita Springer, Tokyo) 1995
    High-Temperature Superconductors and Novel Inorganic Materials, NATO ASI Series 3 (eds. by G. Van Tendeloo, E.V. Antipov and S.N. Putilin, Kluwer Academic, Dordorecht) 1999
Lectures and oral presentations  (32):
  • 1T2C型強誘電体メモリアレイの作製と評価
    (第65回応用物理学会学術講演会講演予稿集 2004)
  • 強磁性トンネル接合を用いたpseudo spin-MOSFETの提案と理論解析
    (第68回応用物理学会学術講演会 2007)
  • pseudo spin-MOSFET/spin-MOSFETの不揮発性SRAM/ラッチ回路への応用
    (第68回応用物理学会学術講演会 2007)
  • スピン注入磁化反転MTJを用いた不揮発性SRAM/ラッチ回路
    (第68回応用物理学会学術講演会 2007)
  • Nonvolatile SRAM and flip-flop architectures using magnetic tunnel junctions with current-induced magnetization switching technology
    (52nd Annual Conf. on Magnetism and Magnetic Materials 2007)
Education (1):
  • - 1999 Tokyo Institute of Technology Graduate School, Division of Science and Engineering
Professional career (1):
  • Doctor of Engineering (Tokyo Institute of Technology)
Work history (1):
  • 1999 - Tokyo Institute of Technology Research Associate
Association Membership(s) (1):
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