Rchr
J-GLOBAL ID：200901024623020503
Update date: Feb. 04, 2024
Fujita Miki
フジタ ミキ | Fujita Miki
Affiliation and department：
Job title：
Junior Researcher(Assistant Professor)
Research field (3)：
Electric/electronic material engineering
, Crystal engineering
, Applied materials
Research keywords (2)：
結晶成長
, Crystal Growth
Research theme for competitive and other funds (5)：
- 2023 - 2026 分解組立式電気自動車によるものづくり人材育成教育モデル開発
- 2017 - 2020 Fabrication of UV detector using ZnO/Ga2O3 heterojunction
- 2014 - 2017 Growth of BN on graphene by RF-MBE
- 2011 - 2015 Development of solar cells with high stability at elevated temperatures
- 2005 - 2006 シャッターシーケンス変調によるMBE成長Zn0の高品質化の研究
Papers (13)：
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Takashi Tsukasaki, Hisashi Sumikura, Takuma Fujimoto, Miki Fujita, Toshiki Makimoto. Recombination mechanism of heavily Be-doped GaAsN by time-resolved photoluminescence. Journal of Vacuum Science & Technology A. 2023. 41. 5
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Takashi Tsukasaki, Naoki Mochida, Miki Fujita, Toshiki Makimoto. Electrical properties of heavily Si-doped GaAsN after annealing. Physica B: Condensed Matter. 2022. 625
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Takashi Tsukasaki, Ren Hiyoshi, Miki Fujita, Toshiki Makimoto. Correction: Photoluminescence Mechanism in Heavily Si-Doped GaAsN (Crystal Research and Technology, (2021), 56, 3, (2000143), 10.1002/crat.202000143). Crystal Research and Technology. 2021. 56. 11
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Takashi Tsukasaki, Ren Hiyoshi, Miki Fujita, Toshiki Makimoto. Photoluminescence Mechanism in Heavily Si-Doped GaAsN. Crystal Research and Technology. 2021. 56. 3. 2000143-2000143
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T. Tsukasaki, R. Hiyoshi, M. Fujita, T. Makimoto. Si doping mechanism in Si doped GaAsN. Journal of Crystal Growth. 2019. 514. 45-48
ｍore...
MISC (7)：
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M Fujita, R Suzuki, M Sasajima, T Kosaka, Y Deesirapipat, Y Horikoshi. Molecular beam epitaxial growth of ZnMgO/ZnO/ZnMgO single quantum well structure on Si(111) substrate. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2006. 24. 3. 1668-1670
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Y Deesirapipat, M Fujita, M Sasajima, R Suzuki, C Antarasena, Y Horikoshi. Effects of MgO-buffer layer on the structural and optical properties of polycrystalline ZnO films grown on glass substrate. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2005. 44. 7A. 5150-5155
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M Fujita, M Sasajima, Y Deesirapipat, Y Horikoshi. Molecular beam epitaxial growth of hexagonal ZnMgO films on Si(111) substrates using thin MgO buffer layer. JOURNAL OF CRYSTAL GROWTH. 2005. 278. 1-4. 293-298
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T Tatsumi, M Fujita, N Kawamoto, M Sasajima, Y Horikoshi. Intrinsic defects in ZnO films grown by molecular beam epitaxy. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. 2004. 43. 5A. 2602-2606
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M Fujita, N Kawamoto, M Sasajima, Y Horikoshi. Molecular beam epitaxy growth of ZnO using initial Zn layer and MgO buffer layer on Si(111) substrates. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2004. 22. 3. 1484-1486
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Lectures and oral presentations (23)：
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AlGaAs/GaAs超格子太陽電池のPL法による評価
(第84回応用物理学会秋季学術講演会 2023)
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RF-MBE 法で成長した AlGaAsN のフォトルミネッセンス発光
(第84回応用物理学会秋季学術講演会 2023)
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粉末ターゲットを用いたスパッタリング法によるGa2O3薄膜の成長
(第70回応用物理学会春季学術講演会 2023)
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粉末ターゲットを用いたスパッタリング法による酸化ガリウムの電気伝導度制御
(The 高専 @SEMICON Japan 2022 2022)
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X線逆格子マッピングによる不純物ドープGaAsNの評価
(第83回応用物理学会秋季学術講演会 2022)
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Education (2)：
- Waseda University
- Waseda University Graduate School, Division of Science and Engineering Electrical Enginerring
Professional career (1)：
Association Membership(s) (2)：
応用物理学会
, Japan Society of Applied Physics
