Rchr
J-GLOBAL ID：200901029826291237
Update date: Jun. 26, 2024
Ishida Shuichi
イシダ シュウイチ | Ishida Shuichi
Research field (2)：
Magnetism, superconductivity, and strongly correlated systems
, Semiconductors, optical and atomic physics
Research keywords (4)：
金属薄膜
, 半導体薄膜
, Metal Film
, Semiconductor Film
Research theme for competitive and other funds (6)：
不純物半導体Si:Sbの金属一非金属転移
ナローギャップ半導体の磁場誘起金属-非金属転移と非線形伝導
ガリウム砒素基板上ナローギャップ半導体薄膜の輸送現象
Metal-Insulator Tranition in Doped Semiconductor Si : Sb
Magnetic-Field Induced Metal-Insulator Transition and Non-Ohmic Conduction in Narrow-Gap Semiconductors
Transport Properties in Films of Narrow-Gap Semiconductors
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MISC (33)：
Si:Sbのデルタドープ層とバルクとの弱局在領域の磁気抵抗の比較. 2001. 302-303. 7
Comparison of Magnetoconductance of δ-doped layer and bulk Si : Sb in the Weak-Localization Regime. Physica. 2001. 302/303. 7-11
S Ishida, K Oto, S Takaoka, K Murase, T Serikawa. Crossover from hopping to diffusive transport with increasing gate voltage in poly-Si MOS inversion layer. PHYSICA STATUS SOLIDI B-BASIC RESEARCH. 2000. 218. 1. 89-92
Si:Sbの上部ハバードバンド輸送現象の弱局在による解析. 2000. 218. 1. 177
ISHIDA S, OTO K, TAKAOKA S, MURASE K, SERIKAWA T. ポリSi MOS反転層のゲート電圧によるホッピングから拡散伝導へのクロスオーバー. European Conference on Physics of Magnetism 2002. 2000. 218. 1. 89-92
ｍore...
Works (37)：
GaAs基板上のInSb薄膜における電気伝導
2001 -
デルタドープされたSi:Sbにおける反局在効果
2001 -
Electrical Conduction in InSb Film on GaAs Substrate
2001 -
Weak Anti-Localization in δ-doped Si : Sb
2001 -
金属型Si:Sbの電気伝導と弱局在
2000 -
ｍore...
Professional career (1)：
(BLANK)
Association Membership(s) (2)：
応用物理学会
, 日本物理学会
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