Comparison of magnetoconductance of the δ-doped layer and bulk crystal of Si:Sb in the weak localization regime.

FUJIMOTO A; KOBORI H; OHYAMA T; ISHIDA S; SATOH K; KUSAKA T; KAKEHI Y

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J-GLOBAL ID：200902191026447200 Reference number：01A0686429

Comparison of magnetoconductance of the δ-doped layer and bulk crystal of Si:Sb in the weak localization regime.

弱い局在化領域にあるSi:Sbに関するデルタドープ層とバルク結晶の磁気コンダクタンスの比較

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Volume： 302/303 Page： 7-11 Publication year： Aug. 2001
JST Material Number： H0676B ISSN： 0921-4526 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Electric conduction in crystalline semiconductors

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