Art
J-GLOBAL ID：200902153797117105
Reference number：00A0422560
Crossover from Hopping to Diffusive Transport with Increasing Gate Voltage in Poly-Si MOS Inversion Layer.
ポリSi MOS反転層においてゲート電圧を高くしたときホッピング輸送から拡散輸送へのクロスオーバ
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Author (5)：
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Material：
Volume：
218
Issue：
1
Page：
89-92
Publication year：
Mar. 01, 2000
JST Material Number：
C0599A
ISSN：
0370-1972
Document type：
Article
Article type：
原著論文
Country of issue：
Germany, Federal Republic of (DEU)
Language：
ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
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Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
JST classification (1)：
JST classification
Category name(code) classified by JST.
Metal-insulator-semiconductor structures
Terms in the title (8)：
Terms in the title
Keywords automatically extracted from the title.
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