Rchr
J-GLOBAL ID:200901030964938274   Update date: Apr. 02, 2021

Nakatsuka Osamu

ナカツカ オサム | Nakatsuka Osamu
Affiliation and department:
Job title: Professor
Homepage URL  (2): http://alice.xtal.nagoya-u.ac.jp/nanoeledev/http://alice.xtal.nagoya-u.ac.jp/nanoeledev/e_index.html
Research field  (1): Thin-film surfaces and interfaces
Research keywords  (6): crystalline growth ,  thin film ,  surface structure ,  crystalline structure ,  electrical property:electron conduction ,  solid state devices
Research theme for competitive and other funds  (2):
  • 2015 - 2018 フェルミレベルピニング軽減による金属/ゲルマニウム系材料低抵抗コンタクト
  • 2006 - 2009 Geエレクトロニクスに向けた低抵抗・超平坦金属/Geコンタクト形成技術
Papers (302):
  • Lai Huajun, Peng Ying, Gao Jie, Kurosawa Masashi, Nakatsuka Osamu, Takeuchi Tsunehiro, Miao Lei. Silicon-based low-dimensional materials for thermal conductivity suppression: recent advances and new strategies to high thermoelectric efficiency. JAPANESE JOURNAL OF APPLIED PHYSICS. 2021. 60. SA
  • Suwito Galih Ramadana, Fukuda Masahiro, Suprayoga Edi, Ohtsuka Masahiro, Hasdeo Eddwi Hesky, Nugraha Ahmad Ridwan Tresna, Sakashita Mitsuo, Shibayama Shigehisa, Nakatsuka Osamu. Formation of ultra-thin Ge1-xSnx/Ge1-x-ySixSny quantum heterostructures and their electrical properties for realizing resonant tunneling diode. APPLIED PHYSICS LETTERS. 2020. 117. 23
  • T. Doi, K. Hashimoto, W. Takeuchi, O. Nakatsuka. Crystal Growth of Epitaxial 3C-SiC Thin Film on Si Substrate by Chemical Vapor Deposition using Single Precursor of Vinylsilane. ECS Trans. 2020. 98. 169-176
  • O. Nakatsuka, S. Shibayama, M. Kurosawa, M. Sakashita. (Invited) Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design. ECS Trans. 2020. 98. 149-156
  • Peng Ying, Lai Huajun, Liu Chengyan, Gao Jie, Kurosawa Masashi, Nakatsuka Osamu, Takeuchi Tsunehiro, Zaima Shigeaki, Tanemura Sakae, Miao Lei. Realizing high thermoelectric performance in p-type Si1-x-yGexSny thin films at ambient temperature by Sn modulation doping. APPLIED PHYSICS LETTERS. 2020. 117. 5
more...
MISC (11):
Patents (15):
  • 多層膜構造体およびその形成方法
  • p型SiC用電極
  • ジャーマナイド薄膜、ジャーマナイド薄膜の作成方法、ジャーマナイド薄膜を備えたゲルマニウム構造体
  • 伸張歪ゲルマニウム薄膜の作製方法、伸張歪ゲルマニウム薄膜、及び多層膜構造体
  • METHOD FOR FABRICATING A SILICIDE FILM, MULTILAYERED INTERMEDIATE STRUCTURE AND MULTILAYERED STURUCTURE
more...
Books (4):
  • 第3章,第3節,Geエピタキシャル成長と薄膜構造制御
    株式会社エヌ・ティー・エス 2013
  • Chapter 1.4: Heterostructure Interfaces and Strain
    CRC Press 2013
  • Chapter 17: Slicide and germanide technology for interconnections in ultra-large-scale integrated (ULSI) applications
    Woodhead Publishing 2011
  • Chapter 8, Silicide in "Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications"
    Springer 2009
Lectures and oral presentations  (408):
  • Heterostructure design favorable for n+-Ge1-xSnx pseudo-direct transition layer for optoelectronic application
    (13th International Symposium on Advanced Plasma Scienceand its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science, (ISPlasma2021/IC-PLANTS2021))
  • Epitaxial growth of strain-relaxed and high-Sn-content n-Ge1-xSnx on Si(111) substrate with Ge buffer layer
    (The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT))
  • コンタクト抵抗率低減のための金属/IV族半導体界面制御技術
    (第84回半導体・集積回路技術シンポジウム 2020)
  • Crystal Growth of Epitaxial 3C-SiC Thin Film on Si Substrate By Chemical Vapor Deposition using Single Precursor of Vinylsilane
    (Pacificrim Meeting on Electrochemical and Solid-State Science (PRiME2020))
  • Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design
    (Pacificrim Meeting on Electrochemical and Solid-State Science (PRiME2020))
more...
Education (4):
  • - 2000 Nagoya University Department of Crystalline Materials Science
  • - 2000 Nagoya University Department of Crystalline Materials Science
  • - 1997 Nagoya University Department of Crystalline Materials Science
  • - 1997 Nagoya University Department of Crystalline Materials Science
Professional career (1):
  • 工学(博士) (名古屋大学)
Work history (17):
  • 2017/04/01 - 現在 Nagoya University Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section
  • 2017/04/01 - 現在 Nagoya University Graduate School of Engineering Materials Physics 1 Professor
  • 2016/07/01 - 現在 Graduate School of Engineering, Nagoya University Professor
  • 2016/07/01 - 2017/03/31 Nagoya University Graduate School of Engineering Department of Crystalline Materials Science Nano-Structured Device Engineering Professor
  • 2015/04/01 - 2016/09/30 Stanford University Department of Electrical Engineering Visiting Associate Professor
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Awards (5):
  • 2016/04/06 - Japanese Jouranal Applied Physcis APEX/JJAP Editorial Contribution Award
  • 2015/09/28 - SSDM Organizing Committee SSDM Paper Award 2015 Operations of CMOS Inverter and Ring Oscillator Composed of Ultra-Thin Body Poly-Ge p- and n-MISFETs for Stacked Channel 3D-IC
  • 2015/09/17 - ADMETA Committee ADMETA Technical Achievement Award 2014 Formation of Epitaxial NiGe Layer on Ge(001) Substrate and Influence of Interface Structure on Schottky Barrier Height
  • 2008/05/13 - The fourth International SiGe Technology and Device Meeting ISTDM 2008 Best Poster Award
  • 2006/11/10 - 東京工業大学精密工学研究所 第3回 P&I パテントコンテスト:パテント・オブ・ザ・イヤープロセス・テクノロジー部門
Association Membership(s) (4):
日本真空協会 ,  日本結晶成長学会 ,  日本表面科学会 ,  The Japan Society of Applied Physics
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