Rchr

J-GLOBAL ID：200901037146814548 Update date: Aug. 28, 2020

Che Songbek

チェソンベク | Che Songbek

Affiliation and department：
Job title： Research Associate
Homepage URL (1)： http://www.semi.te.chiba-u.jp

Research keywords (1)：窒化物半導体分子線エピタキシー法半導体デバイス

MISC (48)：

Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa. Fabrication and characterization of 20 periods InN/InGaN MQWs. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6. 2006. 3. 6. 1953-1957
SB Che, W Terashima, Y Ishitani, A Yoshikawa, T Matsuda, H Ishii, S Yoshida. Fine-structure N-polarity InN/InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy. APPLIED PHYSICS LETTERS. 2005. 86. 26. 261903
A Yoshikawa, N Hashimoto, N Kikukawa, SB Che, Y Ishitani. Growth of InN quantum dots on N-polarity GaN by molecular-beam epitaxy. APPLIED PHYSICS LETTERS. 2005. 86. 15. 153115
Y Ishitani, H Masuyama, W Terashima, M Yoshitani, N Hashimoto, SB Che, A Yoshikawa. Bandgap energy of InN and its temperature dependence. Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7. 2005. 2. 7. 2276-2280
MBE Growth and Characterization of Device-Quality Thick InN Epilayers; Comparison between N-polarity and In-polarity Growth Processes. Mat.Res.Soc.Symp.Proc. 2005. 831. E4.1.1

ｍore...

Works (1)：

RFMBE法を用いたInNの結晶成長及び光、電子デバイスへの応用
2003 - 2006

Professional career (1)：

博士(工学) (上智大学)

Awards (3)：

2002 - 第63回応用物理学会学術講演会講演奨励賞
2001 - The Tenth International Conference on II-VI Compound Yong Authors’ Award
2001 - The Tenth International Conference on II-VI Compound Yong Authors’ Award

Association Membership(s) (1)：

応用物理学会

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