Fine-structure N-polarity InN/InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy

CHE Song-Bek; TERASHIMA Wataru; ISHITANI Yoshihiro; YOSHIKAWA Akihiko; MATSUDA Takeyoshi; ISHII Hirotatsu; YOSHIDA Seikoh

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J-GLOBAL ID：200902245277074634 Reference number：05A0679766

Fine-structure N-polarity InN/InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy

分子線エピタキシャル法によってGaNの下地上に成長させた微細構造を持つN-極性のInN/InGaN多重量子井戸

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Material：
Volume： 86 Issue： 26 Page： 261903.1-261903.3 Publication year： Jun. 27, 2005
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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