Rchr
J-GLOBAL ID：200901050221200700
Update date: Sep. 19, 2022
Kishimoto Shigeru
キシモト シゲル | Kishimoto Shigeru
Contact this researcher
You can send email directly to the researcher.
Research field (2)：
Nano/micro-systems
, Nanomaterials
Research keywords (10)：
窒化ガリウム
, ナノデバイス
, プラズマプロセス
, 薄膜トランジスタ
, ナノチューブ
, GaN
, nanodevice
, plasma-process
, thin-film-transistor
, nanotube
Research theme for competitive and other funds (8)：
2006 - 2010 カーボンナノチューブFETの開発
2006 - 2010 Development of carbon nanotube FETs
2003 - 2010 高性能GaN HEMTの開発
2003 - 2010 高品質カーボンナノチューブの生成
2003 - 2010 Development of a highly efficient GaN HEMT
2003 - 2010 Generation of quality carbon nanotubes
2002 - 2010 量子ナノ構造形成技術の研究
2002 - 2010 Fabrication of quantum nanostructures
Show all
MISC (84)：
Masato Tamaoki, Hideki Imaeda, Shigeru Kishimoto, Takashi Mizutani. Transfer-free fabrication of graphene field effect transistor arrays using solid-phase growth of graphene on a SiO2/Si substrate. Applied Physics Letters. 2013. 103. 18. 183114
Masato Tamaoki, Hideki Imaeda, Shigeru Kishimoto, Takashi Mizutani. Transfer-free fabrication of graphene field effect transistor arrays using solid-phase growth of graphene on a SiO2/Si substrate. Applied Physics Letters. 2013. 103. 18. 183114
Satoshi Ishii, Mamoru Nishu, Shigeru Kishimoto, Takashi Mizutani. Fabrication of Thin-Film Transistor Integrated Circuits on Flexible Substrate by Transfer Technique of Carbon Nanotube Network Using Poly(vinyl alcohol). JAPANESE JOURNAL OF APPLIED PHYSICS. 2013. 52. 10. 035203
Satoshi Ishii, Mamoru Nishu, Shigeru Kishimoto, Takashi Mizutani. Fabrication of Thin-Film Transistor Integrated Circuits on Flexible Substrate by Transfer Technique of Carbon Nanotube Network Using Poly(vinyl alcohol). JAPANESE JOURNAL OF APPLIED PHYSICS. 2013. 52. 10. 035203
Masato Tamaoki, Shigeru Kishimoto, Takashi Mizutani. Effects of graphene thickness on the electrical properties of carbon nanotube field effect transistors with graphene contacts. Applied Physics Letters. 2013. 103. 3. 033120
ｍore...
Patents (2)：
カーボンナノチューブの作製方法
カーボンナノチューブの作製方法、及びカーボンナノチューブの作製装置
Lectures and oral presentations (4)：
(NH4)2S処理によるAl2O3 AlGaN/GaN MOS FET特性の改善
(第58回応用物理学関係連合講演会 2011)
嫌気環境下CNT-FETの作製とその評価
(第58回応用物理学関係連合講演会 2011)
PECVD成長CNTのPVAによるPEN基板への転写とTFT作製
(第58回応用物理学関係連合講演会 2011)
PECVDを用いたCNT薄膜トランジスタの集積回路の実現
(第58回応用物理学関係連合講演会 2011)
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in
researchmap
.
For details, see here
.
Return to Previous Page
TOP
BOTTOM
