Rchr
J-GLOBAL ID：200901053786944222
Update date: Jun. 07, 2020
Suzuki Ryoichiro
スズキリョウイチロウ | Suzuki Ryoichiro
Research field (1)：
Electronic devices and equipment
Research keywords (4)：
MOCVD法
, 量子ドット
, 面発光レーザ
, 半導体レーザ
Research theme for competitive and other funds (1)：
2007 - 2009 有機金属気相成長法によるGaInNAs系量子ドットとレーザ応用
MISC (4)：
Ryoichiro Suzuki, Tomoyuki Miyamoto, Tomoyuki Sengoku, Fumio Koyama. Reduction of spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer. APPLIED PHYSICS LETTERS. 2008. 92. 14. 141110
R. Suzuki, T. Miyamoto, F. Koyama. Wavelength elongation and improved emission efficiency of MOCVD-grown InAs quantum dots by GaNAs buffer layer. Journal of Crystal Growth. 2007. 298. 574
Ryoichiro Suzuki, Tomoyuki Miyamoto, Tetsuya Matsuura, Furnio Koyama. Photoluminescence characterization of InAs quantum dots on GaNAs buffer layer by metalorganic chemical vapor deposition. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS. 2006. 45. 20-23. L585-L587
R Suzuki, T Miyamoto, T Matsuura, F Koyama. InAs quantum dot formed on GaNAs buffer layer by metalorganic chemical vapor deposition. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3. 2006. 3. 3. 528-+
Work history (1)：
Tokyo Institute of Technology Interdisciplinary Graduate School of Science and Engineering, Electronics and Applied Physics
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in
researchmap
.
For details, see here
.
Return to Previous Page
TOP
BOTTOM
