Rchr
J-GLOBAL ID：200901055617687191
Update date: Sep. 19, 2024
EISUKE TOKUMITSU
トクミツ エイスケ | EISUKE TOKUMITSU
Affiliation and department：
Research field (1)：
Electronic devices and equipment
Research keywords (1)：
半導体デバイス、酸化物半導体、強誘電体、薄膜トランジスタ、不揮発性メモリ、パワーデバイス、溶液プロセス
Research theme for competitive and other funds (30)：
- 2020 - 2023 Investigation of steep-slope transistor using ferroelectric polarization dynamics
- 2019 - 2023 単一アナログデバイスと局所的学習則を用いるリアルニューロモーフィックシステム
- 2014 - 2016 Solution-processed SiC Films and Its Application to Power Devices
- 2012 - 2015 Proposal of varialbe-area electrode structure by field effect and its application to variable capacitors
- 2012 - 2014 Current control of graphene channel transistors using semiconductor contacts
- 2009 - 2011 Study on lithography-less solution process for nano-devices and its application to nonvolatile memories
- 2005 - 2006 強誘電体ゲートを用いた大電流透明薄膜トランジスタの研究
- 2003 - 2005 Proposal of huge-charge-controlled field-effect transistor using ferroelectric gate insulator and its application to next-generation integrated circuits
- 2004 - 2004 強誘電体を用いた不揮発性多値・アナログメモリの研究
- 2002 - 2003 強誘電体を用いた金属・導電体中の電荷制御とスイッチング素子への応用
- 2002 - 2003 強誘電体・高誘電率材料・導電性酸化物を用いた新しい集積機能デバイスの研究
- 2000 - 2002 Systematic survey and property control of high-dielectric-constant thin films for gate insulators of next generation MOSFETs
- 2001 - 2001 強誘電体・高誘電率材料を用いた機能性デバイスの試作とロジック回路への応用
- 2000 - 2001 人工単結晶強誘電体ドットの形成とマイクロキャパシタへの適用
- 1999 - 2000 Development of Low-Temperature MOCVD Technology for Ferroelectric Thin Films
- 1995 - 2000 超並列光エレクトロニクス
- 1997 - 1999 Study on Singl-Transistor-Cell-Type Ferroelectric Memory
- 1997 - 1998 Study on memory characteristics of non-volatile ferroelectric-gate transistors for neural network applications
- 1996 - 1997 強誘電体微細構造の形成と不揮発性微小メモリ効果の実現
- 1995 - 1996 Fabrication of Long-Life Laser Diodes in GaAs films on Si formed by annealing under ultrahigh pressure
- 1995 - 1996 Preparation of ferroelectric BaMgF_4films on GaAs for the control of two-dimensional electron gas
- 1992 - 1994 Self-Learning Functions in Electron Devices and Their Applications to Neural Networks
- 1993 - 1993 超高圧下アニールと圧力・温度差比例降下法によるヘテロ構造の熱不整欠陥の抑制
- 1987 - 1987 歪超格子によるII-VI族化合物半導体の物性制御
- 不揮発性メモリ用の新強誘電体材料の研究
- 強誘電体をゲート絶縁膜に用いたニューロデバイスの研究
- 強誘電体を用いたリコンフィギャラブルロジック回路の研究
- Study on new ferroelectric materials for non-volatile memory applications
- Neuro-devices using ferroelectric thin films as gate inslators
- Reconfigurable logic circuits using ferroelectric materials
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Papers (63)：
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Mohit, Takaaki Miyasako, Eisuke Tokumitsu. Indium oxide and indium-tin-oxide channel ferroelectric gate thin film transistors with yttrium doped hafnium-zirconium dioxide gate insulator prepared by chemical solution process. Japanese Journal of Applied Physics. 2021. 60
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Mohit, Tatsuya Murakami, Ken-ichi Haga, Eisuke Tokumitsu. Impact of annealing environment on electrical properties of yttrium-doped hafnium zirconium dioxide thin films prepared by the solution process. Japanese Journal of Applied Physics. 2020. 59. SP. SPPB03-SPPB03
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Mohit, Ken-ichi Haga, Eisuke Tokumitsu. Electrical properties of yttrium-doped hafnium-zirconium dioxide thin films prepared by solution process for ferroelectric gate insulator TFT application. Japanese Journal of Applied Physics. 2020. 59. SM. SMMB02-SMMB02
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Puneet Jain, Yuji Nakabayashi, Ken-ichi Haga, Eisuke Tokumitsu. Electrical properties of In2O3 and ITO thin films formed by solution process using In(acac)3 precursors. Japanese Journal of Applied Physics. 2020. 59. SC. SCCB12-SCCB12
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Eisuke Tokumitsu. A simple analysis of polarization reversal of ferroelectric capacitor demonstrating negative capacitance-like behavior. Japanese Journal of Applied Physics. 2020. 59. SC. SCCB06-SCCB06
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MISC (214)：
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Yuta Miyabe, Isato Ogawa, Mutsumi Kimura, Eisuke Tokumitsu, Kenichi Haga, Isao Horiuchi. Evaluation of (Bi, La)4Ti3012 Thin Film for Capacitor-Type Synapses. IMFEDK 2018 - 2018 International Meeting for Future of Electron Devices, Kansai. 2018
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Yuichi Nagahisa, Yoshishige Tsuchiya, Eisuke Tokumitsu. A study on graphitization of 4H-SiC(0001) surface under low pressure oxygen atmosphere and effects of pre-oxidation treatment. Materials Science Forum. 2015. 821-823. 949-952
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Panagiotis Dimitrakis, Yoshihisa Fujisaki, Guohan Hu, Eisuke Tokumitsu. Preface. Materials Research Society Symposium Proceedings. 2015. 1729
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Eisuke Tokumitsu, Tatsuya Shimoda. Oxide-channel ferroelectric-gate thin film transistors prepared by solution process. Proceedings of the International Display Workshops. 2015. 1. 71-74
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P. T. Tue, T. Miyasako, E. Tokumitsu, T. Shimoda. Kelvin probe force microscopy study on operating In-Sn-O-channel ferroelectric-gate thin-film transistors. Journal of Applied Physics. 2014. 115. 10
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Books (4)：
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Oxide-Channel Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Function
“Ferroelectric-Gate Field Effect Transistor Memories”,Springer, 2016. 2016
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Applications of Oxide Channel Ferroelectric-Gate Thin Film Transistors
“Ferroelectric-Gate Field Effect Transistor Memories”, Springer, 2016. 2016
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Materials and physics for nonvolatile memories II : spring 2010, April 5-9, San Francisco, California, U.S.A.
Materials Research Society 2010 ISBN:9781605112275
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電子物性・材料の事典
朝倉書店 2006
Lectures and oral presentations (210)：
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Coating properties of chemical solution processed MoS2 thin films on various oxides
(2017 European Materials Research Society (E-MRS) Spring Meeting, Strasbourg, France, May 22-26, 2017. paper Q.PM.4 2017)
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Chemical Solution Process of In-Based Oxides and MoS2 for Thin Film Transistors
(The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017), June 18-321, 2017, Fukui, paper PA2-1-1 2017)
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Direct Imprinting of Oxide Precursor Gel for New Fabrication Process of Thin Film Transistors
(The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017), June 18-321, 2017, Fukui, paper PO3-47 2017)
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Investigation of Nb-Zr-O thin film using sol-gel coating
(82016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016), paper B3-3(oral) July 4 - 6, 2016Hakodate Kokusai Hotel, Hakodate, Japan 2017)
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Fabrication of MoS2 thin films on oxide-dielectric-covered substrates
(Compound Semiconductor Week, June 26-30, 2016 Toyama International Conference Center, Toyama paper MoP-ISCS-121 2017)
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Education (3)：
- - 1987 0192 東京工業大学 理工学研究科 電子物理工学
- - 1987 Tokyo Institute of Technology Graduate School, Division of Science and Engineering
- - 1982 Tokyo Institute of Technology School of Engineering
Professional career (1)：
- Doctor of Engineering (Tokyo Institute of Technology)
Work history (6)：
Association Membership(s) (5)：
応用物理学会
, 電子情報通信学会
, IEEE
, IEEE
, Materials Research Society
