Art

J-GLOBAL ID：202002219628140537   Reference number：20A1235639

Electrical properties of In₂O₃ and ITO thin films formed by solution process using In(acac)₃ precursors

In(acac)₃前駆体を用いた溶液プロセスにより形成されたIn₂O₃およびITO薄膜の電気特性

Author (4)： Jain Puneet (School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1211, Japan) ,  Nakabayashi Yuji (Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1211, Japan) ,  Haga Ken-ichi (School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1211, Japan) ,  Tokumitsu Eisuke (School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1211, Japan)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 59  Issue： SC  Page： SCCB12 (6pp)  Publication year： Feb. 2020 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *indium compound ,  precursor(substance) ,  treatment ,  indium oxide ,  *indium tin oxide ,  oxide ,  thin film ,  gel ,  RTA ,  temperature ,  machining time ,  atmosphere(environment) ,  oxygen ,  Hall mobility ,  electrical resistivity ,  carrier density ,  tin compound ,  thin film transistor ,  MOSFET ,  *electrical characteristic
Semi thesaurus term： solution processing ,  *ITO ,  oxide thin film ,  heat treatment temperature ,  processing time ,  oxygen atmosphere ,  carrier concentration ,  n-channel metal oxide semiconductor field effect transistor

JST classification (1)： Oxide thin films  (BK14050P)

Substance index (1)： Zinc acetylacetonate

Terms in the title (6)： acac ,  前駆体 ,  溶液 ,  プロセス ,  ITO薄膜 ,  電気特性