Rchr

J-GLOBAL ID：200901067036641245 Update date: Sep. 29, 2023

Ohyama Hidenori

オオヤマヒデノリ | Ohyama Hidenori

Affiliation and department：
Job title： Professor

Research field (1)： Electronic devices and equipment

Research keywords (2)：半導体デバイス , Semiconductor Devices

Research theme for competitive and other funds (2)：

半導体デバイスの放射線損傷機構に関する研究
On the radiation degradation mechanism of semiconductor devices

MISC (276)：

M Nakabayashi, H Ohyama, N Hanano, E Simoen, C Claeys, K Takakura, T Iwata, T Kudou, M Yoneoka. Effects of high temperature electron irradiation on trench-IGBT. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. 2005. 16. 7. 463-467
K Hayama, K Takakura, H Ohyama, JM Rafi, A Mercha, E Simoen, C Claeys. Body potential analysis of ultra thin gate oxide FD-SOI MOSFETs in accumulation mode operation. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. 2005. 16. 7. 459-462
H Ohyama, K Takakura, T Watanabe, K Nishiyama, K Shigaki, T Kudou, M Nakabayashi, S Kuboyama, S Matsuda, C Kamezawa, et al. Radiation damage of SiC Schottky diodes by electron irradiation. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. 2005. 16. 7. 455-458
K Hayama, K Takakura, H Ohyama, JM Rafi, A Mercha, E Simoen, C Claeys, A Kokkoris. Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs. IEEE TRANSACTIONS ON NUCLEAR SCIENCE. 2004. 51. 6. 3795-3800
K Hayama, K Takakura, H Ohyama, A Mercha, E Simoen, C Claeys, JM Rafi, M Kokkoris. Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation. MICROELECTRONICS RELIABILITY. 2004. 44. 9-11. 1721-1726

ｍore...

Works (2)：

先端半導体デバイスの放射線損傷
1995 -
Radiation damage of advanced semiconductor Devices
1995 -

Education (2)：

- 1983 Toyohashi University of Technology
- 1983 Toyohashi University of Technology

Professional career (1)：

(BLANK)

Work history (2)：

1992 - 1992 大学間電子工学研究センターの客員研究員
1992 - 1992 IMEC(Intercemicity Micro Electronics Center) Invited Researcher

Association Membership(s) (3)：

広用物理学会 , 電子情報通信学会 , 応用物理学会

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