Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation

HAYAMA K; TAKAKURA K; OHYAMA H; MERCHA A; SIMOEN E; CLAEYS C; RAFI J M; KOKKORIS M

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J-GLOBAL ID：200902284589935837 Reference number：04A0758925

Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation

7.5MeV陽子照射による,超薄ゲート酸化膜FD-SOI nMOSFETにおける電気的性能の劣化とフローティングボディ効果

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Material：
Volume： 44 Issue： 9/11 Page： 1721-1726 Publication year： Sep. 2004
JST Material Number： C0530A ISSN： 0026-2714 Document type： Article
Article type：原著論文 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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