Rchr
J-GLOBAL ID：200901071095085280
Update date: Aug. 18, 2022
Yamasaki Satoshi
ヤマサキ サトシ | Yamasaki Satoshi
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Affiliation and department：
National Institute of Advanced Industrial Science and Technology
About National Institute of Advanced Industrial Science and Technology
Search "National Institute of Advanced Industrial Science and Technology"
Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=S85419614
Research field (2)：
Inorganic materials
, Electronic devices and equipment
Research keywords (8)：
高温動作
, パワー半導体デバイス
, EL 電子デバイス
, パワーデバイス
, エレクトロニクス材料
, 高さ標準
, 励起子発光
, ダイヤモンド
Research theme for competitive and other funds (1)：
半導体・絶縁膜の欠陥構造
MISC (88)：
Sung-Gi Ri, Hideyuki Watanabe, Masahiko Ogura, Daisuke Takeuchi, Satoshi Yamasaki, Hideyo Okushi. Hydrogen plasma etching mechanism on (001) diamond. JOURNAL OF CRYSTAL GROWTH. 2006. 293. 2. 311-317
Y. Yamazaki, K. Ishikawa, N. Mizuochi, S. Yamasaki. Structure of diamond surface defective layer damaged by hydrogen ion beam exposure. DIAMOND AND RELATED MATERIALS. 2006. 15. 4-8. 703-706
K Ishikawa, Y Yamaoka, M Nakamura, Y Yamazaki, S Yamasaki, Y Ishikawa, S Samukawa. Surface reactions during etching of organic low-k films by plasmas of N-2 and H-2. JOURNAL OF APPLIED PHYSICS. 2006. 99. 8. 083305-1-083305-6
Y Yamazaki, K Ishikawa, S Samukawa, S Yamasaki. Defect creation in diamond by hydrogen plasma treatment at room temperature. PHYSICA B-CONDENSED MATTER. 2006. 376. 327-330
D. Takeuchi, C. E. Nebel, S. Yamasaki. Photoelectron emission properties of hydrogen terminated intrinsic diamond. JOURNAL OF APPLIED PHYSICS. 2006. 99. 8. 086102-1-086102-3
ｍore...
Professional career (1)：
理学博士
Association Membership(s) (1)：
Japan Society of Applied Physics
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