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J-GLOBAL ID：200901075225986868
Update date: Aug. 24, 2022
Tajima Michio
タジマ ミチオ | Tajima Michio
Affiliation and department：
Job title：
Professor (non-tenured)
Papers (28)：
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Michio Tajima, Yoichiro Ishikawa, Hirotatsu Kiuchi, Atsushi Ogura. Origin of room-temperature photoluminescence around C-line in electron-irradiated Si and its applicability for quantification of carbon. Appl. Phys. Express. 2018. 11. 041301-1-041301-5
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H. Kiuchi, M. Tajima, F. Higuchi, A. Ogura, N. Iida, S. Tachibana, I. Masada and E. Nishijima. Jpn. J. Appl. Phys. 2017. 56. 7. 070305-1-070305-3
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Fumito Higuchi, Michio Tajima, Atsushi Ogura. Photoluminescence Due to Early Stage of Oxygen Precipitates in Multicrystalline Si for Solar CellsFumito Higuchi, Michio Tajima and Atsushi Ogura. Jpn. J. Appl. Phys. 2017. 56. 6. 070308-1-070308-3
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Michio Tajima, Hirotatsu Kiuchi, Fumito Higuchi, Atsushi Ogura. Quantification of C in Si by photoluminescence at liquid N temperature after electron irradiation. Appl. Phys. Express. 2017. 4. 4. 046602-1-046602-3
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Michio Tajima, Kei Nakagawa, Hirotastu Kiuchi, Fumito Higuchi, Atsushi Ogura. Recent Advances in Quantitative Impurity Analysis by Photoluminescence Technique: High Concentration of Dopant Impurities and Low Concentration of Carbon. Proc. 7th Int. Symp. Advanced Science and Technology of Silicon Materials (JSPS Si Symposium). 2016. 185-189
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Books (6)：
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シリコン結晶技術
日本学術振興会結晶加工と評価技術第145委員会 2015
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「太陽電池技術ハンドブック」小長井 誠・植田 譲 共編
オーム社 2013
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「太陽電池技術ハンドブック」小長井 誠・植田 譲 共編
オーム社 2013
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半導体SiC技術と応用 第2版
日刊工業新聞社 2011
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太陽電池の基礎と応用
培風館 2010
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Lectures and oral presentations (20)：
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Quantification of low-level carbon in Si by photoluminescence at liquid nitrogen temperature and higher after electron irradiation
(10th International Workshop on Crystalline Silicon for Solar Cells (CSSC-10) 2018)
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電子線照射Si結晶の室温フォトルミネッセンスで観測されるC-line近傍発光の起源
(第65回応用物理学会春季学術講演会 2018)
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電子線照射Si結晶の室温フォトルミネッセンスで観測されるC-line近傍発光を利用した炭素評価
(第65回応用物理学会春季学術講演会 2018)
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Determination of carbon concentration in phosphorus-doped n-type Czochralski-grown Si crystals by liquid-nitrogen-temperature photoluminescence after electron irradiation
(27th International Photovoltaic Science and Engineering Conference (PVSEC-27) 2017)
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Systematic Variation of Photoluminescence with Dopant Impurities in Highly Doped and Highly Compensated Si
(17th Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVII) 2017)
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Committee career (7)：
Awards (6)：
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