Rchr
J-GLOBAL ID：200901076351649318
Update date: Aug. 29, 2020
SHEN Xu-Qiang
シン キョクキョウ | SHEN Xu-Qiang
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Affiliation and department：
National Institute of Advanced Industrial Science and Technology
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Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=K57463021
MISC (37)：
Toshio Kitamura, Xu-Qiang Shen, Mutsumi Sugiyama, Hisayuki Nakanishi, Mitsuaki Shimizu, Hajime Okumura. Generation of cubic phase in molecular-beam-epitaxy-grown hexagonal InGaN epilayers on InN. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006. 45. 1 A. 57-60
XQ Shen, H Okumura, H Matsuhata. Studies of the annihilation mechanism of threading dislocation in AlN films grown on vicinal sapphire (0001) substrates using transmission electron microscopy. APPLIED PHYSICS LETTERS. 2005. 87. 10. 101910-1-101910-3
XQ Shen, M Shimizu, T Yamamoto, Y Honda, H Okumura. Characterizations of GaN films and GaN/AlN super-lattice structures grown on vicinal sapphire (0001) substrates by RF-MBE. JOURNAL OF CRYSTAL GROWTH. 2005. 278. 1-4. 378-382
XQ Shen, H Matsuhata, H Okumura. Reduction of the threading dislocation density in GaN films grown on vicinal sapphire(0001) substrates. APPLIED PHYSICS LETTERS. 2005. 86. 2. 021912-1-021912-3
Surface morphologies of AlGaN films and AlGaN/GaN heterostructures on vicinal sapphire (0001) substrates grown by rf-MBE. IPO CONFERENCE SERIES. 2005. 184. 231-234
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