Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates

SHEN X Q; MATSUHATA H; OKUMURA H

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J-GLOBAL ID：200902292791446018 Reference number：05A0131449

Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates

サファイア(0001)微斜面基板上に成長させたGaN薄膜における貫通転位密度の減少

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Author (3)： , ,
Material：
Volume： 86 Issue： 2 Page： 021912.1-021912.3 Publication year： Jan. 10, 2005
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films , Lattice defects in semiconductors

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