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J-GLOBAL ID:200902283838042477   Reference number:05A0880603

Studies of the annihilation mechanism of threading dislocation in AlN films grown on vicinal sapphire (0001) substrates using transmission electron microscopy

微斜面サファイヤ(0001)基板上に成長したAlN膜における貫通転位の消滅機構に関する透過電子顕微鏡法を用いた研究
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Volume: 87  Issue: 10  Page: 101910.1-101910.3  Publication year: Sep. 05, 2005 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semiconductor thin films  ,  Lattice defects in semiconductors 

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