Takehiro Haneda, Kosei Yanachi, Hiroki Ishizaki, Yohei Otani, Chiaya Yamamoto, Junji Yamanaka, Tetsuya Sato, Toshiyuki Takamatsu, Yukio Fukuda. In situ formation of aluminum germanate interlayer for high-k/Ge metal-oxide-semiconductor structure by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen. Proceedings of the twelfth International Symposium on Sputtering and Plasma Processes (ISSP 2013). 2013. 402-405
Hiroshi Okamoto, Daichi Yamada, Hidefumi Narita, Yohei Otani, Chiaya Yamamoto, Junji Yamanaka, Tetsuya Sato, Yukio Fukuda. Effect of postdeposition treatments on the electrical properties of Al2O3/GeO2 gate stack grown on Ge substrate by radical-enhanced atomic layer deposition. Extended abstract of 9th International Workshop on New group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration". 2016. I-04-7-I-04-8
Fabrication and I-V characteristic evaluation of Pt/TiO2/Ge capacitors
(15th International Workshop on New Group IV Semiconductor Nanoelectronics 2024)
Cryogenic oxidation of Si and Ge substrates using Ar/O2 DC discharge plasma irradiation
(The 85th JSAP Autumn Meeting 2024 2024)
Characteristics of thin films deposited on Ge substrates at ultra low temperatures
(FY 2023 RIEC Annual Meeting on Cooperative Research Projects 2024)
Fabrication of Al2O3 film on Ge substrate at 190K and its electrical properties
(14th International Workshop on New Group IV Semiconductor Nanoelectronics 2023)
Electrical Properties of Al2O3 Thin Films Deposited on p-type Ge Substrates
(The 70th JSAP Spring Meeting 2023 2023)