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J-GLOBAL ID:200901096023947183   Update date: Jul. 16, 2024

Okumura Hajime

オクムラ ハジメ | Okumura Hajime
Affiliation and department:
Homepage URL  (1): http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=H71841137
Research field  (1): Semiconductors, optical and atomic physics
Research theme for competitive and other funds  (2):
  • 2004 - 2005 シリコンカーバイドエピタキシャル結晶成長のモデリングとエピタキシャル膜特性向上
  • ワイドギャップ半導体の結晶成長評価とデバイス応用
Papers (12):
  • Shiyang Ji, Ryoji Kosugi, Kazutoshi Kojima, Kohei Adachi, Yasuyuki Kawada, Kazuhiro Mochizuki, Yoshiyuki Yonezawa, Sadafumi Yoshida, Hajime Okumura. Fast-filling of 4H-SiC trenches at 10 μm/h by enhancing partial pressures of source species in chemical vapor deposition processes. Journal of Crystal Growth. 2020. 546
  • K. Nagaya, T. Hirayama, T. Tawara, K. Murata, H. Tsuchida, A. Miyasaka, K. Kojima, T. Kato, H. Okumura, M. Kato. Observation of carrier lifetime distribution in 4H-SiC thick epilayers using microscopic time-resolved free carrier absorption system. Journal of Applied Physics. 2020. 128. 10
  • Xu-Qiang Shen, Kazutoshi Kojima, Hajime Okumura. Single-phase high-quality semipolar (10-13) AlN epilayers on m-plane (10-10) sapphire substrates. Applied Physics Express. 2020. 13. 3
  • Akihiro Koyama, Mitsuru Sometani, Kensuke Takenaka, Koji Nakayama, Akira Miyasaka, Kazutoshi Kojima, Kazuma Eto, Tomohisa Kato, Junji Senzaki, Yoshiyuki Yonezawa, et al. Low V F 4H-SiC N-i-P diodes using newly developed low-resistivity p-type substrates. Japanese Journal of Applied Physics. 2020. 59. SG. SGGD14-SGGD14
  • Kazutoshi Kojima, Hajime Okumura. Development of 4H-SiC Schottky np diode with high blocking voltage and ultralow on-resistance. Applied Physics Letters. 2020. 116. 1
more...
MISC (72):
Professional career (1):
  • Doctor of Engineering (Osaka University)
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